HY029N10B HuaYi

Name: HY029N10B
Brand: HuaYi
SKU: HY029N10B_HuaYi
Availability: OutOfStock
Rating: 5 (11 reviews)

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HY029N10B MOSFETs across the USA, India, Europe, Australia, and various other global locations. HY029N10B MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	HY029N10B
Manufacturer:	HuaYi
Category:	MOSFETs
Description:	MOSFET N Trench 100V 270A (Tc) 4V @ 250uA 3.3 mÎ© @ 50A,10V TO-263-2L RoHS
Datasheet:

Price (USD)

1: USD 1.4721 ea
Line Total: USD 1.47

Availability : 0

Qty	Unit Price
1	$ 1.4721
10	$ 1.2512
30	$ 1.1293
100	$ 0.9917
500	$ 0.9318
800	$ 0.9047
1600	$ 0.893
4000	$ 0.8852

HY029N10B More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 31 Oct to Thu. 06 Nov

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 1.4721
10	$ 1.2512
30	$ 1.1293
100	$ 0.9917
500	$ 0.9318
800	$ 0.9047
1600	$ 0.893
4000	$ 0.8852

Specifications

Manufacturer HuaYi HuaYi
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO - 263 - 2L TO - 263 - 2L
Brand Category Huayi Huayi
Fet Type n trench n trench
Drain To Source Voltagevdss 100 V 100 V
Continuous Drain Current Id @ 25°C 270 A (t C) 270 A (t C)
Vgsth Max @ Id 4v @ 250ua 4v @ 250ua
Rds On Max @ Id Vgs 3.3 m @ 50a,10v 3.3 m @ 50a,10v
Power Dissipation-Max Ta 394.7 W 394.7 W
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 270 A 270 A
Power Dissipation Pd 394.7 W 394.7 W
Drain Source On Resistance Rdson@Vgs Id 3.3 mOhms @10V , 50A 3.3 mOhms @10V , 50A
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel

We are delighted to provide the HY029N10B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HY029N10B and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HY029N10B is a MOSFET manufactured by HuaYi that has a N Trench type structure. It has a 100V breakdown voltage and a 270A (Tc) current rating. The gate threshold voltage is 4V and the gate leakage current is 250uA. It has a 3.3mÎ© @ 50A on-resistance and a 10V drain-source voltage rating. It is housed in a TO-263-2L package and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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