Product Information

HY1710P

HY1710P electronic component of HuaYi

Datasheet
MOSFET N Trench 100V 70A (Tc) 4V @ 250uA 18 mΩ @ 35A,10V TO-220FB-3L RoHS

Manufacturer: HuaYi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6115 ea
Line Total: USD 0.61

970 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970 - Warehouse 1


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

HY1710P
HuaYi

1 : USD 0.6245
10 : USD 0.5137
50 : USD 0.4674
100 : USD 0.4069
500 : USD 0.3807
1000 : USD 0.3667

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The HuaYi HY1710P is a MOSFET N-Trench device with a maximum drain-source voltage rating of 100V and a continuous drain current rating of up to 70A. It has a threshold voltage of 4V at a gate-source current of 250uA and an on-state resistance of 18 mO when a drain current of 35A is applied. The device is packaged in a TO-220FB-3L form factor and is compliant with Restriction of Hazardous Substances (RoHS).

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HUAYI
HuaYi Microelectronics

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