The HY1908B MOSFET TO-263-2L RoHS is a RoHS-compliant (Restricted Hazardous Substances Directive) industrial-grade N-Channel MOSFET manufactured by HUAYI. It is an optimized solution featuring high parameters, small size, low cost, and low gate charge. This device is designed specifically for reverse polarity protection, sluggish circuit protection, input/output protection, over-current protection, and a variety of microcontroller, central processing unit (CPU), and sensor protection applications. Its features include a breakdown voltage (BVdss) of 300 V, a continuous drain current (ID) of 8 A, a total gate charge (Qg) of 21.6nC, and an on-state drain-source resistance (R DS(on)) of 130 mO at 10 V. Additionally, the TO-263-2L package integrates high heat dissipating performance that optimizes thermal properties and reduces system temperature.