HY1906B HUAYI

HY1906B electronic component of HUAYI
HY1906B HUAYI
HY1906B MOSFETs
HY1906B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HY1906B MOSFETs across the USA, India, Europe, Australia, and various other global locations. HY1906B MOSFETs are a product manufactured by HUAYI. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. HY1906B
Manufacturer: HUAYI
Category: MOSFETs
Description: MOSFET N Trench 60V 120A (Tc) 4V @ 250uA 7.5 mΩ @ 60A,10V TO-263-2L RoHS
Datasheet: HY1906B Datasheet (PDF)
Price (USD)
1: USD 0.8258 ea
Line Total: USD 0.83 
Availability : 52
  
Ship by Thu. 27 Nov to Wed. 03 Dec
QtyUnit Price
1$ 0.8258
10$ 0.6534
30$ 0.5812
100$ 0.3305
500$ 0.3023
800$ 0.2854

Availability 52
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8258
10$ 0.6534
30$ 0.5812
100$ 0.3305
500$ 0.3023
800$ 0.2854

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HY1906B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HY1906B and other electronic components in the MOSFETs category and beyond.

Image Part-Description
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MOSFET N & P Trench 30V 8A,7A 2.4V @ 250uA 15 mΩ @ 8A,10V;25 mΩ @ 6A,10V SOP-8_150mil RoHS
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The HY1906B is a low-power MOSFET manufactured by HUAYI. This MOSFET is constructed with a N-Trench design,has a breakdown operating voltage of 60V, and is rated for 120A Tc, 4V @ 250uA 7.5 mΩ @ 60A, and 10V. This device comes in a TO-263-2L RoHS package and is compliant with RoHS (Restriction of Hazardous Substances) legislation.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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