X-On Electronics has gained recognition as a prominent supplier of HYG028N10NS1B6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG028N10NS1B6 MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG028N10NS1B6 HuaYi

Name: HYG028N10NS1B6
Brand: HuaYi
SKU: HYG028N10NS1B6_HuaYi
Availability: InStock
Rating: 5 (11 reviews)

HYG028N10NS1B6 electronic component of HuaYi

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See Product Specifications

Part No.	HYG028N10NS1B6
Manufacturer:	HuaYi
Category:	MOSFETs
Description:	100V 230A 2.4mΩ@10V,50A 300W 3V@250uA 242pF@25V N Channel 10.32nF@25V 176nC@10V -55℃~+175℃@(Tj) TO-263-6 MOSFETs ROHS
Datasheet:	HYG028N10NS1B6 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.9142 ea
Line Total: USD 1.91

Availability - 399
Ship by Fri. 27 Jun to Wed. 02 Jul

MOQ: 1 Multiples: 1
Pack Size: 1

HYG028N10NS1B6 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

399

Ship by Fri. 27 Jun to Wed. 02 Jul

MOQ : 1
Multiples : 1

1 : USD 1.9142
10 : USD 1.5672
30 : USD 0.9296
100 : USD 0.7846
500 : USD 0.7195
800 : USD 0.6898

Specifications

Manufacturer

HuaYi HuaYi

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Notes:- Show Stocked Products With Similar Attributes.

HYG028N10NS1B6 Alternative Parts

We are delighted to provide the HYG028N10NS1B6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG028N10NS1B6 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HYG028N10NS1B6 MOSFET is a RoHS-compliant n-channel metal-oxide semiconductor field-effect transistor, with Maximum Drain Source Voltage of 100V, Maximum Drain Source Current of 230A, and Maximum Power Dissipation of 300W. It has a typical RDS(on) at 10V of 2.4 mO, Maximum Current at 50A, and Maximum Capacitance of 242pF at 25V. This device also has an ESR of 10.32nF at 25V, a Qg of 176nC at 10V, and an operating temperature from -55? to +175? (Tj). This MOSFET is of the TO-263-6 package type, and is manufactured by HuaYi.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
399 Ship by Fri. 27 Jun to Wed. 02 Jul MOQ : 1 Multiples : 1	1 : USD 1.9142 10 : USD 1.5672 30 : USD 0.9296 100 : USD 0.7846 500 : USD 0.7195 800 : USD 0.6898

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