HYG035N10NS2B HuaYi

HYG035N10NS2B electronic component of HuaYi
HYG035N10NS2B HuaYi
HYG035N10NS2B MOSFETs
HYG035N10NS2B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HYG035N10NS2B MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG035N10NS2B MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. HYG035N10NS2B
Manufacturer: HuaYi
Category: MOSFETs
Description: TO-263-2L MOSFETs ROHS
Datasheet: HYG035N10NS2B Datasheet (PDF)
Price (USD)
1: USD 1.6866 ea
Line Total: USD 1.69 
Availability : 0
  
QtyUnit Price
1$ 1.6866
10$ 1.3824
30$ 0.9126
100$ 0.6948
500$ 0.638
800$ 0.6124

Availability 0
Ship by Fri. 28 Nov to Thu. 04 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6866
10$ 1.3824
30$ 0.9126
100$ 0.6948
500$ 0.638
800$ 0.6124

   
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Product Category
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We are delighted to provide the HYG035N10NS2B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG035N10NS2B and other electronic components in the MOSFETs category and beyond.

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The HYG035N10NS2B with TO-263-2L MOSFETs is an electronic component manufactured by HuaYi. It is a type of Field-Effect Transistor (FET) designed for switching and amplification of electronic signals. It is a monolithic integrated circuit with three terminals, and is constructed using high-grade silicon and metal oxide semiconductor (MOS) fabrication techniques. It is packaged in a robust TO-263-2L case and conforms to the RoHS (Reduction of Hazardous Substances) European directive.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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