HYG042N10NS1P HuaYi

HYG042N10NS1P electronic component of HuaYi
HYG042N10NS1P HuaYi
HYG042N10NS1P MOSFETs
HYG042N10NS1P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HYG042N10NS1P MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG042N10NS1P MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. HYG042N10NS1P
Manufacturer: HuaYi
Category: MOSFETs
Description: TO-220FB-3L MOSFETs ROHS
Datasheet: HYG042N10NS1P Datasheet (PDF)
Price (USD)
1: USD 1.0828 ea
Line Total: USD 1.08 
Availability : 0
  
QtyUnit Price
1$ 1.0828
10$ 0.906
50$ 0.7513
100$ 0.6629
500$ 0.6108
1000$ 0.5848
2000$ 0.5766
4000$ 0.5726

Availability 0
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0828
10$ 0.906
50$ 0.7513
100$ 0.6629
500$ 0.6108
1000$ 0.5848
2000$ 0.5766
4000$ 0.5726

   
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Product Category
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We are delighted to provide the HYG042N10NS1P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG042N10NS1P and other electronic components in the MOSFETs category and beyond.

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The HYG042N10NS1P with TO-220FB-3L MOSFETs ROHS is a MOSFET manufactured by HuaYi. It is a through hole, three-lead, TO-220FB-3L packaged dual N-channel enhancement-mode silicon MOSFET. This electronic part has an on-state drain current rating of 42 Amps and is capable of handling a breakdown voltage of 10V. It has a maximum power dissipation of 35 Watts and a threshold voltage of 3.0V. The MOSFET is RoHS compliant and has standard lead plating of Sn/Pb.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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