X-On Electronics has gained recognition as a prominent supplier of HYG050N13NS1B6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG050N13NS1B6 MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG050N13NS1B6 HuaYi

Name: HYG050N13NS1B6
Brand: HuaYi
SKU: HYG050N13NS1B6_HuaYi
Availability: InStock
Rating: 5 (11 reviews)

HYG050N13NS1B6 electronic component of HuaYi

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See Product Specifications

Part No.	HYG050N13NS1B6
Manufacturer:	HuaYi
Category:	MOSFETs
Description:	135V 200A 3.8mΩ@10V,50A 375W 3V@250uA 181pF@75V N Channel 11.662nF@75V 165nC@10V +175℃@(Tj) TO-263-6L MOSFETs ROHS
Datasheet:	HYG050N13NS1B6 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.3986 ea
Line Total: USD 3.4

Availability - 32
Ship by Fri. 27 Jun to Wed. 02 Jul

MOQ: 1 Multiples: 1
Pack Size: 1

HYG050N13NS1B6 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

32

Ship by Fri. 27 Jun to Wed. 02 Jul

MOQ : 1
Multiples : 1

1 : USD 3.3986
10 : USD 2.1586
30 : USD 1.7217
100 : USD 1.4947
500 : USD 1.3926
800 : USD 1.3478

Specifications

Manufacturer

HuaYi HuaYi

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Datasheet

HUAYI HYG050N13NS1B6 HUAYI HYG050N13NS1B6

Rohs

y y

Drain Source Voltage Vdss

135 V 135 V

Continuous Drain Current Id

200 A 200 A

Drain Source On Resistance Rdson@Vgs Id

3.8 mOhms @10V , 50A 3.8 mOhms @10V , 50A

Power Dissipation Pd

375 W 375 W

Gate Threshold Voltage Vgsth@Id

3 V @250uA 3 V @250uA

Reverse Transfer Capacitance Crss@Vds

181 pF @75V 181 pF @75V

Type

N Channel N Channel

Input Capacitance Ciss@Vds

11.662 nF @75V 11.662 nF @75V

Total Gate Charge Qg@Vgs

165 nC @10V 165 nC @10V

Operating Temperature

+ 175 C @ (Tj) + 175 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

HYG050N13NS1B6 Alternative Parts

We are delighted to provide the HYG050N13NS1B6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG050N13NS1B6 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HYG050N13NS1B6 is an N Channel 11.662nF@75V MOSFET manufactured by HuaYi and compliant with ROHS standards. It has a rated voltage of 135V, current range of 200A, and 3.8mO @ 10V. The power handling capacity is 375W and it has a 3V@250uA gate capacitance. The 175pF@75V gate capacitance, 165nC@10V and +175? @Tj junction temperature rating are all present. It comes in the form of a TO-263-6L package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
32 Ship by Fri. 27 Jun to Wed. 02 Jul MOQ : 1 Multiples : 1	1 : USD 3.3986 10 : USD 2.1586 30 : USD 1.7217 100 : USD 1.4947 500 : USD 1.3926 800 : USD 1.3478

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