X-On Electronics has gained recognition as a prominent supplier of HYG053N10NS1P MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG053N10NS1P MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG053N10NS1P HuaYi

Name: HYG053N10NS1P
Brand: HuaYi
SKU: HYG053N10NS1P_HuaYi
Availability: InStock
Rating: 5 (11 reviews)

HYG053N10NS1P electronic component of HuaYi

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See Product Specifications

Part No.	HYG053N10NS1P
Manufacturer:	HuaYi
Category:	MOSFETs
Description:	TO-220FB-3L MOSFETs ROHS
Datasheet:	HYG053N10NS1P Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.7602 ea
Line Total: USD 0.76

Availability - 37
Ship by Fri. 27 Jun to Wed. 02 Jul

MOQ: 1 Multiples: 1
Pack Size: 1

HYG053N10NS1P More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

37

Ship by Fri. 27 Jun to Wed. 02 Jul

MOQ : 1
Multiples : 1

1 : USD 0.7602
10 : USD 0.6006
50 : USD 0.3885
100 : USD 0.292
500 : USD 0.2659
1000 : USD 0.2492

Specifications

Manufacturer

HuaYi HuaYi

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Datasheet

HUAYI HYG053N10NS1P HUAYI HYG053N10NS1P

Rohs

y y

Drain Source Voltage Vdss

- -

Continuous Drain Current Id

- -

Drain Source On Resistance Rdson@Vgs Id

- -

Power Dissipation Pd

- -

Gate Threshold Voltage Vgsth@Id

- -

Reverse Transfer Capacitance Crss@Vds

- -

Type

- -

Input Capacitance Ciss@Vds

- -

Total Gate Charge Qg@Vgs

- -

Notes:- Show Stocked Products With Similar Attributes.

HYG053N10NS1P Alternative Parts

We are delighted to provide the HYG053N10NS1P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG053N10NS1P and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HYG053N10NS1P is a three-terminal MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from HuaYi that is constructed with a TO-220FB-3L package. It is designed to protect against overvoltage, overcurrent, and electrostatic discharges, and features reverse-body breakdown protection. This MOSFET is compliant with RoHS requirements and has a low thermal resistance junction-tab (R?JA) and a typical on-resistance of 101mO. It has an isolation voltage of 1.5kV and operates in a temperature range between -55°C to 150°C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUAYI may also be referenced as

HuaYi Microelectronics

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Availability	Price	Buy Price	Quantity
37 Ship by Fri. 27 Jun to Wed. 02 Jul MOQ : 1 Multiples : 1	1 : USD 0.7602 10 : USD 0.6006 50 : USD 0.3885 100 : USD 0.292 500 : USD 0.2659 1000 : USD 0.2492

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