HYG055N08NS1B HuaYi

HYG055N08NS1B electronic component of HuaYi
HYG055N08NS1B HuaYi
HYG055N08NS1B MOSFETs
HYG055N08NS1B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HYG055N08NS1B MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG055N08NS1B MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. HYG055N08NS1B
Manufacturer: HuaYi
Category: MOSFETs
Description: 80V 120A 5.3mΩ@10V,50A 187.5W 3V@250uA 15pF@25V N Channel 3.66nF@25V 60nC@10V -55℃~+175℃@(Tj) TO-263-2L MOSFETs ROHS
Datasheet: HYG055N08NS1B Datasheet (PDF)
Price (USD)
1: USD 0.937 ea
Line Total: USD 0.94 
Availability : 0
  
QtyUnit Price
1$ 0.937
10$ 0.7552
30$ 0.6628
100$ 0.3869
500$ 0.3502
800$ 0.3318

Availability 0
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.937
10$ 0.7552
30$ 0.6628
100$ 0.3869
500$ 0.3502
800$ 0.3318

   
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We are delighted to provide the HYG055N08NS1B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG055N08NS1B and other electronic components in the MOSFETs category and beyond.

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GroupThe HYG055N08NS1B is an N-channel MOSFET ROHS-compliant component manufactured by HuaYi Group. It is designed for use with a DC operating voltage of up to 80V and current of up to 120A. The MOSFET has a gate-source threshold voltage (VGS) of 5.3mO @ 10V, drain-source RDS(ON) of 50A @ 187.5W, body-drain diode V(BR)Dss of 3V @ 250uA, gate-source capacitance of 15pF @ 25V, gate-drain capacitance of 3.66nF @ 25V, gate-source charge Qg of 60nC @ 10V, and operational temperature range of -55? to +175? (Tj). It is housed in a TO-263-2L package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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