The HYG080N10LS1D with TO-252-2L MOSFETs is a transistor manufactured by HuaYi that has an electrical/mechanical structure compliant with the "RoHS" directive. The MOSFETs are composed of a gate, drain, and source electrode and are usually used to amplify and switch electrical signals. Specifically, this part is a N-Channel Power MOSFET that has a drain current of 8A (continuous) and a drain-source voltage of 100V. It comes in an TO-252-2L package and is suitable for a wide variety of applications including device protection and power switching.