The HYG082N03LR1C1 is an N Channel MOSFET designed and manufactured by HuaYi. It has a maximum drain source voltage of 30V and a maximum drain current of 32A. It has a low output resistance of 7mO at 10V and 10A and a power dissipation of 21.4W. The gate threshold voltage is 1.8V with a maximum gate current of 250uA, and the input capacitance is 65pF at 25V. It has a maximum junction capacitance of 787pF at 25V and a maximum drain-source capacitance of 14.8nC at 10V. The operating temperature range is -55? to +175? and the package of the device is DFN3x3-8L. It is also RoHS compliant.