HYG200P10LR1P HuaYi

HYG200P10LR1P electronic component of HuaYi
HYG200P10LR1P HuaYi
HYG200P10LR1P MOSFETs
HYG200P10LR1P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HYG200P10LR1P MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG200P10LR1P MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. HYG200P10LR1P
Manufacturer: HuaYi
Category: MOSFETs
Description: 100V 80A 20mΩ@10V,40A 214W 1.8V@250uA 91pF@50V P Channel 11.52nF@50V 83nC@10V +175℃@(Tj) TO-220FB-3L MOSFETs ROHS
Datasheet: HYG200P10LR1P Datasheet (PDF)
Price (USD)
1: USD 1.2844 ea
Line Total: USD 1.28 
Availability : 674
  
Ship by Thu. 27 Nov to Wed. 03 Dec
QtyUnit Price
1$ 1.2844
10$ 1.031
50$ 0.5812
100$ 0.4965
500$ 0.4458
1000$ 0.4195

Availability 674
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2844
10$ 1.031
50$ 0.5812
100$ 0.4965
500$ 0.4458
1000$ 0.4195

   
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We are delighted to provide the HYG200P10LR1P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG200P10LR1P and other electronic components in the MOSFETs category and beyond.

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The HYG200P10LR1P is a P-Channel MOSFET manufactured by HuaYi. It is a TO-220FB-3L package. This MOSFET is RoHS compliant and has a max Junction Temperature rating of +175°C. Its rated drain-source voltage is 100V, drain current is 80A at 10V, drain-source On-state resistance is 20mO at 10V, and drain current is 40A at 1.8V. Its power dissipation is 214W and its capacitance is 91pF at 50V, capacitance for Ciss is 11.52nF@50V, and capacitance for Crss is 83nC@10V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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