X-On Electronics has gained recognition as a prominent supplier of SI2309A BIPOLAR TRANSISTORS - BJT across the USA, India, Europe, Australia, and various other global locations. SI2309A BIPOLAR TRANSISTORS - BJT are a product manufactured by HXY MOS. We provide cost-effective solutions for BIPOLAR TRANSISTORS - BJT, ensuring timely deliveries around the world.

SI2309A HXY MOS

SI2309A electronic component of HXY MOS
Images are for reference only
See Product Specifications
Part No.SI2309A
Manufacturer: HXY MOS
Category: Bipolar Transistors - BJT
Description: SOT-23 Bipolar Transistors - BJT ROHS
Datasheet: SI2309A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.1066 ea
Line Total: USD 1.07

Availability - 12804
Ships to you between
Fri. 28 Jun to Wed. 03 Jul
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
11285 - WHS 1


Ships to you between
Fri. 28 Jun to Wed. 03 Jul

MOQ : 5
Multiples : 5
5 : USD 0.052
50 : USD 0.0463
150 : USD 0.0436
1500 : USD 0.0337
3000 : USD 0.0321
4500 : USD 0.0313

   
Manufacturer
Product Category
Package
Rohs
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We are delighted to provide the SI2309A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2309A and other electronic components in the Bipolar Transistors - BJT category and beyond.

FETThe SI2309A with SOT-23 Bipolar Transistors - BJT ROHS manufactured by HXY MOSFET is a 3-terminal Mono & N-Channel Enhancement Mode MOSFET that features low gate-charge and fast switching speed. This device is suitable for low voltage and high current switching applications, and its small package minimizes the heater distribution area and reduces the circuit size. The device offers a low on-resistance and extended drain-source breakdown voltage that ranges from 5 V to 30 V. It also comes with an extended JEDEC temperature range of -55°C to 150°C. The device is compliant with RoHS standards.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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