AUTOMOTIVE GRADE AUIRF1405 Features HEXFET Power MOSFET D V 55V (BR)DSS R typ. 4.6m DS(on) % & max 5.3m G &% I 169A D (Silicon Limited) S % ( ) I 75A D (Package Limited) & * + % ,% - . D Description Specifically designed for Automotive applications, S D this Stripe Planar design of HEXFET Power G MOSFETs utilizes the latest processing techniques to TO-220AB achieve low on-resistance per silicon area. This benefit AUIRF1405 combined with the fast switching speed and ruggedized device design that HEXFET power G D S MOSFETs are well known for, provides the designer Gate Drain Source with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 169 D C GS I T = 100C Continuous Drain Current, VGS 10V (Silicon Limited) 118 D C A Continuous Drain Current, V 10V (Package Limited) 75 I T = 25C GS D C I Pulsed Drain Current 680 DM P T = 25C Power Dissipation 330 D C W 2.2 Linear Derating Factor W/C V Gate-to-Source Voltage 20 GS V E Single Pulse Avalanche Energy (Thermally Limited) 560 AS mJ I See Fig.12a, 12b, 15, 16 AR Avalanche Current A E Repetitive Avalanche Energy AR mJ dv/dt Peak Diode recovery dv/dt 5.0 V/ns T -55 to + 175 Operating Junction and J T Storage Temperature Range STG C 300 (1.6mm from case ) Soldering Temperature, for 10 seconds 10 lbf in (1.1N m) Mounting Torque, 6-32 or M3 screw Thermal Resistance Units Parameter Typ. Max. R Junction-to-Case 0.45 JC R Case-to-Sink, Flat, Greased Surface 0.50 CS C/W R Junction-to-Ambient 62 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250 A V Drain-to-Source Breakdown Voltage 55 V (BR)DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.057 V/C D (BR)DSS J R V = 10V, I = 101A DS(on) Static Drain-to-Source On-Resistance 4.6 5.3 m GS D V = V , I = 250A V Gate Threshold Voltage 2.0 4.0 V GS(th) DS GS D V = 25V, I = 101A gfs Forward Transconductance 69 S DS D I Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DSS DS GS V = 44V, V = 0V, T = 150C 250 DS GS J I V = 20V GSS Gate-to-Source Forward Leakage 200 nA GS V = -20V Gate-to-Source Reverse Leakage -200 GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 170 260 I = 101A g D V = 44V Q Gate-to-Source Charge 44 66 nC DS gs Q V = 10V gd Gate-to-Drain Mille) Charge 62 93 GS V = 38V t Turn-On Delay Time 13 d(on) DD t I = 101A Rise Time 190 D r t R = 1.1 d(off) Turn-Off Delay Time 130 ns G V = 10V t Fall Time 110 f GS D L Internal Drain Inductance Between lead, D 4.5 nH 6mm (0.25in.) G L Internal Source Inductance from package S 7.5 S and center of die contact V = 0V C Input Capacitance 5480 iss GS C V = 25V Output Capacitance 1210 DS oss C Reverse Transfer Capacitance 280 pF = 1.0MHz, See Fig.5 rss V = 0V, V = 1.0V, = 1.0MHz C Output Capacitance 5210 GS DS oss C V = 0V, V = 44V, = 1.0MHz oss Output Capacitance 900 GS DS V = 0V, V = 0V to 44V C eff. Effective Output Capacitance 1500 oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 169 (Body Diode) A showing the G I Pulsed Source Current integral reverse SM 680 (Body Diode) p-n junction diode. S V T = 25C, I = 101A, V = 0V Diode Forward Voltage 1.3 V J S GS SD t T = 25C, I = 101A rr Reverse Recovery Time 88 130 ns J F Q Reverse Recovery Charge 250 380 nC di/dt = 100A/s rr t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Forward Turn-On Time on C eff. is a fixed capacitance that gives the same charging Repetitive rating pulse width limited by oss max. junction temperature. (See fig. 11). time as C while V is rising from 0 to 80% V . oss DS DSS Starting T = 25C, L = 0.11mH J Calculated continuous current based on maximum allowable R = 25 , I = 101A. (See Figure 12). G AS junction temperature. Package limitation current is 75A. I 101A, di/dt 210A/ s, V V , SD DD (BR)DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax T 175C J avalanche performance. Pulse width 400s duty cycle 2%. R is measured at T of approximately 90C. J 2 www.irf.com