AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology V 55V DSS Ultra Low On-Resistance 175C Operating Temperature R max. 4.9m DS(on) Fast Switching Repetitive Avalanche Allowed up to Tjmax I 150A D Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing S S D techniques to achieve extremely low on-resistance per silicon G G area. Additional features of this design are a 175C junction 2 D Pak TO-262 operating temperature, fast switching speed and improved AUIRF1405ZS AUIRF1405ZL repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in G D S Automotive applications and a wide variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF1405ZL TO-262 Tube 50 AUIRF1405ZL Tube 50 AUIRF1405ZS 2 AUIRF1405ZS D -Pak Tape and Reel Left 800 AUIRF1405ZSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 150 D C GS A I T = 100C Continuous Drain Current, V 10V 110 D C GS I Pulsed Drain Current 600 DM P T = 25C Maximum Power Dissipation 230 W D C Linear Derating Factor 1.5 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 270 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 420 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.65 JC C/W Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-11 AUIRF1405ZS/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.049 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 3.7 4.9 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 88 S V = 25V, I = 75A DS D 20 V = 55 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 120 180 I = 75A g D Q Gate-to-Source Charge 31 nC V = 44V gs DS Q Gate-to-Drain Charge 46 V = 10V gd GS t Turn-On Delay Time 18 V = 25V d(on) DD t Rise Time 110 I = 75A r D ns t Turn-Off Delay Time 48 R = 4.4 d(off) G V = 10V t Fall Time 82 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 4780 V = 0V iss GS C Output Capacitance 770 V = 25V oss DS = 1.0MHz C Reverse Transfer Capacitance 410 rss pF C Output Capacitance 2730 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 600 V = 0V, V = 44V = 1.0MHz oss GS DS C Effective Output Capacitance 910 V = 0V, V = 0V to 44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 75 S (Body Diode) showing the A Pulsed Source Current integral reverse I 600 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 75A,V = 0V SD J S GS t Reverse Recovery Time 30 46 ns T = 25C ,I = 75A, V = 25V rr J F DD Q Reverse Recovery Charge 30 45 nC di/dt = 100A/s rr Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.10mH, R = 25 , I = 75A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, starting T = 25C, L = 0.10mH, R = 25, I = 75A, V =10V. J G AS GS 2 This is applied to D Pak When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 2015-11-11