PD - 97690A AUTOMOTIVE GRADE AUIRF2805 Features HEXFET Power MOSFET D V 55V (BR)DSS R typ. 3.9m DS(on) max 4.7m G % I 175A D (Silicon Limited) & S I 75A D (Package Limited) ( ) * Description D % & S D G TO-220AB ( AUIRF2805 ) & G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Max. Parameter Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 175 GS D C I T = 100C Continuous Drain Current, VGS 10V (Silicon Limited) 120 A D C I T = 25C Continuous Drain Current, V 10V (Package Limited) 75 GS D C 700 I Pulsed Drain Current DM 330 P T = 25C Power Dissipation W D C 2.2 Linear Derating Factor W/C Gate-to-Source Voltage 20 V V GS E 450 Single Pulse Avalanche Energy (Thermally Limited) mJ AS E (tested) Single Pulse Avalanche Energy Tested Value 1220 AS I Avalanche Current See Fig. 12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR -55 to + 175 T Operating Junction and J Storage Temperature Range C T STG Soldering Temperature, for 10 seconds (1.6mm from case ) 300 Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.45 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS RJunction-to-Ambient 62 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.06 V/C Reference to 25C, I = 1mA D m R Static Drain-to-Source On-Resistance 3.9 4.7 = 10V, I = 104A DS(on) V GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A DS GS D gfs Forward Transconductance 91 S V = 25V, I = 104A DS D I DSS Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge 150 230 I = 104A D Q gs Gate-to-Source Charge 38 57 nC V = 44V DS Q gd Gate-to-Drain Mille) Charge 52 78 V = 10V GS t d(on) Turn-On Delay Time 14 V = 28V DD t Rise Time 120 I = 104A r D t d(off) Turn-Off Delay Time 68 ns R = 2.5 G t f Fall Time 110 V = 10V GS L Internal Drain Inductance 4.5 Between lead, D D nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 5110 V = 0V iss GS C oss Output Capacitance 1190 pF V = 25V DS C rss Reverse Transfer Capacitance 210 = 1.0MHz, See Fig. 5 C oss Output Capacitance 6470 V = 0V, V = 1.0V, = 1.0MHz GS DS C Output Capacitance 860 V = 0V, V = 44V, = 1.0MHz oss GS DS Effective Output Capacitance C eff. oss 1600 V = 0V, V = 0V to 44V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 175 (Body Diode) A showing the G I Pulsed Source Current 700 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 104A, V = 0V SD J S GS t Reverse Recovery Time 80 120 ns T = 25C, I = 104A rr J F Q di/dt = 100A/ s Reverse Recovery Charge 290 430 nC rr t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Forward Turn-On Time on Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Starting T = 25C, L = 0.08mH J Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax R = 25 , I = 104A. (See Figure 12). G AS avalanche performance. I 104A, di/dt 240A/ s, V V , SD DD (BR)DSS This value determined from sample failure population, starting T 175C J T = 25C, L = 0.08mH, R = 25 , I = 104A. J G AS Pulse width 400 s duty cycle 2%. R is measured at 2 www.irf.com