AUIRF2805S AUTOMOTIVE GRADE AUIRF2805L Features V 55V DSS Advanced Process Technology R typ. 3.9m DS(on) Ultra Low On-Resistance max. Dynamic dv/dt Rating 4.7m 175C Operating Temperature I 135A D Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Compliant Automotive Qualified * S S D G G Description 2 D Pak TO-262 Specifically designed for Automotive applications, this AUIRF2805S AUIRF2805L HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon G D S area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved Gate Drain Source repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF2805L TO-262 Tube 50 AUIRF2805L Tube 50 AUIRF2805S 2 AUIRF2805S D -Pak Tape and Reel Left 800 AUIRF2805STRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 135 D C GS I T = 100C Continuous Drain Current, V 10V 96 A D C GS I Pulsed Drain Current 700 DM P T = 25C Maximum Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 380 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 920 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR dv/dt Pead Diode Recovery dv/dt 2.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.75 R JC C/W Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF2805S/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.06 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 3.9 4.7 m V = 10V, I = 104A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 91 S V = 25V, I = 104A DS D 20 V =55 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V =44V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 150 230 I = 104A g D Q Gate-to-Source Charge 38 57 nC V = 44V gs DS Q Gate-to-Drain Charge 52 78 V = 10V gd GS t Turn-On Delay Time 14 V = 28V d(on) DD t Rise Time 120 I = 104A r D ns t Turn-Off Delay Time 68 R = 2.5 d(off) G V = 10V t Fall Time 110 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 5110 V = 0V iss GS C Output Capacitance 1190 V = 25V oss DS = 1.0MHz, See Fig. 5 C Reverse Transfer Capacitance 210 rss pF C Output Capacitance 6470 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 860 V = 0V, V = 44V = 1.0MHz oss GS DS C Effective Output Capacitance 1600 V = 0V, V = 0V to 44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 175 S (Body Diode) showing the A Pulsed Source Current integral reverse I 700 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 104A,V = 0V SD J S GS t Reverse Recovery Time 80 120 ns T = 25C ,I = 104A rr J F Q Reverse Recovery Charge 290 430 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.08mH, R = 25 , I = 104A, V =10V. (See Fig.12) Jmax, J G AS GS I 104A, di/dt 240A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 75A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, starting T = 25C, L = 0.08mH, R = 25, I = 104A, V =10V. J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 2015-9-30