AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features V 30V DSS Advanced Process Technology R typ. DS(on) 1.9m Ultra Low On-Resistance max. 2.4m 175C Operating Temperature I 235A D (Silicon Limited) Fast Switching Repetitive Avalanche Allowed up to Tjmax I 160A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing S S D techniques to achieve extremely low on-resistance per silicon G G area. Additional features of this design are a 175C junction 2 D Pak TO-262 operating temperature, fast switching speed and improved AUIRF2903ZS AUIRF2903ZL repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in G D S Automotive applications and wide variety of other applications. Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity AUIRF2903ZL TO-262 Tube 50 AUIRF2903ZL Tube 50 AUIRF2903ZS 2 AUIRF2903ZS D -Pak Tape and Reel Left 800 AUIRF2903ZSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 235 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 166 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 160 D C GS I Pulsed Drain Current 1020 DM P T = 25C Maximum Power Dissipation 231 W D C Linear Derating Factor 1.54 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 231 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 820 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.65 R JC Junction-to-Ambient 62 R C/W JA Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-08-22 AUIRF2903ZS/ZL Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.021 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 1.9 2.4 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D gfs Forward Trans conductance 120 S V = 10V, I = 75A DS D 20 V =30 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V =30V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 160 240 I = 75A g D Q Gate-to-Source Charge 51 nC V = 24V gs DS Q Gate-to-Drain Charge 58 V = 10V gd GS t Turn-On Delay Time 24 V = 15V d(on) DD t Rise Time 100 I = 75A r D ns t Turn-Off Delay Time 48 R = 3.2 d(off) G V = 10V t Fall Time 37 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 6320 V = 0V iss GS C Output Capacitance 1980 V = 25V oss DS = 1.0MHz, See Fig. 5 C Reverse Transfer Capacitance 1100 rss pF C Output Capacitance 5930 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 2010 V = 0V, V = 24V = 1.0MHz oss GS DS C Effective Output Capacitance 3050 V = 0V, V = 0V to 24V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 160 S (Body Diode) showing the A Pulsed Source Current integral reverse I 1020 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 75A,V = 0V SD J S GS t Reverse Recovery Time 34 51 ns T = 25C ,I = 75A, V = 15V rr J F DD Q Reverse Recovery Charge 29 44 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.10mH, R = 25 , I = 75A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, 100% tested to this value in production. 2 This is applied to D Pak When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C J Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) All AC and DC test condition based on old Package limitation current = 75A. 2 2017-08-22