X-On Electronics has gained recognition as a prominent supplier of AUIRF3205ZSTRL MOSFETs across the USA, India, Europe, Australia, and various other global locations. AUIRF3205ZSTRL MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AUIRF3205ZSTRL Infineon

AUIRF3205ZSTRL electronic component of Infineon
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Part No.AUIRF3205ZSTRL
Manufacturer: Infineon
Category: MOSFETs
Description: International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms
Datasheet: AUIRF3205ZSTRL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 800
Multiples : 800
800 : USD 1.0453
8000 : USD 1.0016
80000 : USD 0.9816
N/A

Obsolete
0
MOQ : 800
Multiples : 800
800 : USD 1.9025
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.291
10 : USD 2.8549
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 7.4379
10 : USD 2.6854
100 : USD 2.1951
500 : USD 1.8497
800 : USD 1.7717
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the AUIRF3205ZSTRL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AUIRF3205ZSTRL and other electronic components in the MOSFETs category and beyond.

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AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS HEXFET Power MOSFET Features V 55V Advanced Process Technology DSS Ultra Low On-Resistance R max. DS(on) 6.5m 175C Operating Temperature I 110A D (Silicon Limited) Fast Switching Repetitive Avalanche Allowed up to Tjmax I 75A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed for Automotive applications, this HEXFET Power S D G MOSFET utilizes the latest processing techniques to achieve extremely low G on-resistance per silicon area. Additional features of this design are a 175C 2 TO-220AB D Pak junction operating temperature, fast switching speed and improved repetitive AUIRF3205Z AUIRF3205ZS avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide G D S variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF3205Z TO-220 Tube 50 AUIRF3205Z Tube 50 AUIRF3205ZS 2 AUIRF3205ZS D -Pak Tape and Reel Left 800 AUIRF3205ZSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 110 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 78 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 75 D C GS I Pulsed Drain Current 440 DM P T = 25C Maximum Power Dissipation 170 W D C Linear Derating Factor 1.1 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 180 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 250 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.90 JC Case-to-Sink, Flat, Greased Surface 0.50 R CS C/W Junction-to-Ambient 62 R JA R Junction-to-Ambient ( PCB Mount, steady state) 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-13 AUIRF3205Z/S Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.051 V/C Reference to 25C, I = 1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 4.9 6.5 V = 10V, I = 66A m DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 71 S V = 25V, I = 66A DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 200 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 76 110 I = 66A g D Q Gate-to-Source Charge 21 nC V = 44V gs DS Q Gate-to-Drain Charge 30 V = 10V gd GS t Turn-On Delay Time 18 V = 28V d(on) DD t Rise Time 95 I = 66A r D ns t Turn-Off Delay Time 45 R = 6.8 d(off) G V = 10V t Fall Time 67 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 3450 V = 0V iss GS C Output Capacitance 550 V = 25V oss DS C Reverse Transfer Capacitance 310 = 1.0MHz rss pF C Output Capacitance 1940 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 430 V = 0V, V = 44V = 1.0MHz oss GS DS C Effective Output Capacitance 640 V = 0V, V = 0V to 44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 75 S (Body Diode) showing the A Pulsed Source Current integral reverse I 440 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 66A,V = 0V SD J S GS t Reverse Recovery Time 28 42 ns T = 25C ,I = 66A , V = 25V rr J F DD Q Reverse Recovery Charge 25 38 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig.11) Limited by T starting T = 25C, L = 0.08mH, R = 25 , I = 66A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, starting T = 25C, L = 0.08mH, R = 25, I = 66A, V =10V. J G AS GS This is only applied to TO-220AB package. 2 This is applied to D Pak, When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T of approximately 90C J 2 2015-11-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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