AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS HEXFET Power MOSFET Features V 55V Advanced Process Technology DSS Ultra Low On-Resistance R max. DS(on) 6.5m 175C Operating Temperature I 110A D (Silicon Limited) Fast Switching Repetitive Avalanche Allowed up to Tjmax I 75A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed for Automotive applications, this HEXFET Power S D G MOSFET utilizes the latest processing techniques to achieve extremely low G on-resistance per silicon area. Additional features of this design are a 175C 2 TO-220AB D Pak junction operating temperature, fast switching speed and improved repetitive AUIRF3205Z AUIRF3205ZS avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide G D S variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF3205Z TO-220 Tube 50 AUIRF3205Z Tube 50 AUIRF3205ZS 2 AUIRF3205ZS D -Pak Tape and Reel Left 800 AUIRF3205ZSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 110 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 78 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 75 D C GS I Pulsed Drain Current 440 DM P T = 25C Maximum Power Dissipation 170 W D C Linear Derating Factor 1.1 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 180 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 250 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.90 JC Case-to-Sink, Flat, Greased Surface 0.50 R CS C/W Junction-to-Ambient 62 R JA R Junction-to-Ambient ( PCB Mount, steady state) 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-13 AUIRF3205Z/S Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.051 V/C Reference to 25C, I = 1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 4.9 6.5 V = 10V, I = 66A m DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 71 S V = 25V, I = 66A DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 200 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 76 110 I = 66A g D Q Gate-to-Source Charge 21 nC V = 44V gs DS Q Gate-to-Drain Charge 30 V = 10V gd GS t Turn-On Delay Time 18 V = 28V d(on) DD t Rise Time 95 I = 66A r D ns t Turn-Off Delay Time 45 R = 6.8 d(off) G V = 10V t Fall Time 67 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 3450 V = 0V iss GS C Output Capacitance 550 V = 25V oss DS C Reverse Transfer Capacitance 310 = 1.0MHz rss pF C Output Capacitance 1940 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 430 V = 0V, V = 44V = 1.0MHz oss GS DS C Effective Output Capacitance 640 V = 0V, V = 0V to 44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 75 S (Body Diode) showing the A Pulsed Source Current integral reverse I 440 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 66A,V = 0V SD J S GS t Reverse Recovery Time 28 42 ns T = 25C ,I = 66A , V = 25V rr J F DD Q Reverse Recovery Charge 25 38 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig.11) Limited by T starting T = 25C, L = 0.08mH, R = 25 , I = 66A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, starting T = 25C, L = 0.08mH, R = 25, I = 66A, V =10V. J G AS GS This is only applied to TO-220AB package. 2 This is applied to D Pak, When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T of approximately 90C J 2 2015-11-13