PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET Power MOSFET O Low On-Resistance O 175C Operating Temperature D V = 100V DSS O Fast Switching O Fully Avalanche Rated O Repetitive Avalanche Allowed up to Tjmax R = 18m DS(on) O Lead-Free, RoHS Compliant G O Automotive Qualified * I = 59A D Description S Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea- tures of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient 2 TO-220AB D Pak and reliable device for use in Automotive applica- AUIRF3710Z AUIRF3710ZS tions and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 59 A C GS D I T = 100C Continuous Drain Current, V 10V 42 C GS D I Pulsed Drain Current 240 DM P T = 25C Maximum Power Dissipation 160 W D C 1.1 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy (Thermally limited) E 170 mJ AS Single Pulse Avalanche Energy Tested Value E (tested) 200 AS Avalanche Current I See Fig.12a,12b,15,16 A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 0.92 C/W JC Case-to-Sink, Flat, Greased Surface R 0.50 CS Junction-to-Ambient (PCB Mount, steady state) R 40 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise stated) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 14 18 V = 10V, I = 35A m DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 35 S V = 50V, I = 35A DS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise stated) J Q Total Gate Charge 82 120 nC I = 35A g D Q Gate-to-Source Charge 19 28 V = 80V gs DS Q Gate-to-Drain Mille) Charge 27 40 V = 10V gd GS t Turn-On Delay Time 17 ns V = 50V d(on) DD t Rise Time 77 I = 35A r D t Turn-Off Delay Time 41 R = 6.8 d(off) G t Fall Time 56 V = 10V f GS D L Internal Drain Inductance 4.5 nH Between lead, D 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C Input Capacitance 2900 pF V = 0V iss GS C Output Capacitance 290 V = 25V oss DS C Reverse Transfer Capacitance 150 = 1.0MHz, See Fig. 5 rss C Output Capacitance 1130 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 170 V = 0V, V = 80V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 280 V = 0V, V = 0V to 80V oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 59 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 240 integral reverse SM S (Body Diode) p-n junction diode. V T = 25C, I = 35A, V = 0V SD Diode Forward Voltage 1.3 V J S GS t Reverse Recovery Time 5075ns T = 25C, I = 35A, V = 25V rr J F DD Q Reverse Recovery Charge 100 160 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) t Forward Turn-On Time on C eff. is a fixed capacitance that gives the same charging time Repetitive rating pulse width limited by oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.27mH, This value determined from sample failure population, Jmax J R = 25, I = 35A, V =10V. Part not starting T = 25C, L = 0.27mH,R = 25, I = 35A, V =10V G AS GS GS J G AS 2 recommended for use above this value. This is applied to D Pak, when mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and I 35A, di/dt 380A/s, V V , SD DD (BR)DSS soldering techniques refer to application note AN-994. T 175C. J Pulse width 1.0ms duty cycle 2%. R is measured at T approximately 90C. J This is only applied to TO-220AB pakcage. 2 www.irf.com