AUTOMOTIVE GRADE
AUIRF6215S
HEXFET Power MOSFET
Features
Advanced Planar Technology
V -150V
DSS
Low On-Resistance
P-Channel MOSFET
R max. 0.29
DS(on)
Dynamic dv/dt Rating
175C Operating Temperature
I -13A
D
Fast Switching
Fully Avalanche Rated
D
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
S
G
Description
2
D Pak
Specifically designed for Automotive applications, this cellular design of
AUIRF6215S
HEXFET Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
G D S
fast switching speed and ruggedized device design that HEXFET power
Gate Drain Source
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
Tube 50 AUIRF6215S
2
AUIRF6215S D -Pak
Tape and Reel Left 800 AUIRF6215STRL
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless
otherwise specified.
Symbol Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ -10V -13
D C GS
I @ T = 100C Continuous Drain Current, V @ -10V -9.0 A
D C GS
I Pulsed Drain Current -44
DM
P @T = 25C Maximum Power Dissipation 3.8
D A
W
P @T = 25C Maximum Power Dissipation 110
D C
Linear Derating Factor 0.71 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy (Thermally Limited) 310
mJ
AS
I Avalanche Current -6.6 A
AR
E Repetitive Avalanche Energy 11 mJ
AR
dv/dt Peak Diode Recovery -5.0 V/ns
T Operating Junction and -55 to + 175
J
T Storage Temperature Range C
STG
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
Junction-to-Case 1.4
R
JC
C/W
Junction-to-Ambient ( PCB Mount, steady state) 40
R
JA
HEXFET is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2017-10-10
AUIRF6215S
Static @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage -150 V V = 0V, I = -250A
(BR)DSS GS D
Breakdown Voltage Temp. Coefficient -0.20 V/C Reference to 25C, I = -1mA
V / T
(BR)DSS J D
0.29 V = -10V, I = -6.6A
GS D
R Static Drain-to-Source On-Resistance
DS(on)
0.58 V = -10V, I = -6.6A,T =150C
GS D J
V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A
GS(th) DS GS D
g Forward Trans conductance 3.6 S V = -25V, I = -6.6A
fs DS D
-25 V = -150V, V = 0V
DS GS
I Drain-to-Source Leakage Current A
DSS
-250 V = -120V,V = 0V,T =150C
DS GS J
I Gate-to-Source Forward Leakage -100 V = -20V
GSS GS
nA
Gate-to-Source Reverse Leakage 100 V = 20V
GS
Dynamic Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Q Total Gate Charge 66 I = -6.6A
g D
Q Gate-to-Source Charge 8.1 nC V = -120V
gs DS
Q Gate-to-Drain Charge 35 V = -10V
GS
gd
t Turn-On Delay Time 14 V = -75V
d(on) DD
t Rise Time 36 I = -6.6A
r D
ns
t Turn-Off Delay Time 53 R = 6.8
d(off)
G
t Fall Time 37 R = 12
f
D
Between lead,6mm (0.25in.)
L Internal Source Inductance 7.5 nH from package and center
S
of die contact
C Input Capacitance 860 V = 0V
iss GS
C Output Capacitance 220 V = -25V
oss pF DS
C Reverse Transfer Capacitance 130 = 1.0MHz, See Fig.5
rss
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
I -11
S
(Body Diode) showing the
A
Pulsed Source Current integral reverse
I -44
SM
(Body Diode) p-n junction diode.
V Diode Forward Voltage -1.6 V T = 25C,I = -6.6A,V = 0V
SD J S GS
t Reverse Recovery Time 160 240 ns T = 25C ,I = -6.6A
rr
J F
Q Reverse Recovery Charge 1.2 1.7 C di/dt = 100A/s
rr
Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
t Forward Turn-On Time
on S D
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by T starting T = 25C, L = 14mH, R = 25 , I = -6.6A. (See fig.12)
Jmax, J G AS
I -6.6A, di/dt 620A/s, V V , T 175C.
SD DD (BR)DSS J
Pulse width 300s; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
R is measured at T of approximately 90C
J
2 2015-11-13