AUTOMOTIVE GRADE AUIRF7316Q V Features 1 8 DSS S1 D1 -30V 2 7 Advanced Planar Technology G1 D1 R typ. DS(on) 0.042 3 6 Low On-Resistance S2 D2 4 5 Logic Level Gate Drive max. G2 D2 0.058 Dual P Channel MOSFET Top View I D -4.9A Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, these HEXFET Power MOSFET s in a Dual SO-8 package utilize the lastest SO-8 AUIRF7316Q processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET s are a 150C junction operating G D S temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely Gate Drain Source efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF7316Q SO-8 Tape and Reel 4000 AUIRF7316QTR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units V Drain-Source Voltage -30 DS V I T = 25C Continuous Drain Current, V 10V -4.9 D A GS I T = 70C Continuous Drain Current, V 10V -3.9 D A GS A I Pulsed Drain Current -30 DM I Continuous Source Current (Diode Conduction) -2.5 S P T = 25C Maximum Power Dissipation 2.0 D A W P T = 70C Maximum Power Dissipation 1.3 D A V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 140 mJ AS I Avalanche Current -2.8 A AR E Repetitive Avalanche Energy 0.20 mJ AR dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 62.5 R C/W JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF7316Q Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = -1mA V / T (BR)DSS J D 0.042 0.058 V = -10V, I = -4.9A GS D R Static Drain-to-Source On-Resistance DS(on) 0.076 0.098 V = -4.5V, I = -3.6A GS D V Gate Threshold Voltage -1.0 -3.0 V V = V , I = -250A GS(th) DS GS D gfs Forward Trans conductance 7.7 S V = -15V, I = -4.9A DS D -1.0 V = -24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -25 V = -24V,V = 0V,T =55C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 23 34 I = -4.9A g D Q Gate-to-Source Charge 3.8 5.7 nC V = -15V gs DS Q Gate-to-Drain Charge 5.9 8.9 V = -10V, See Fig.10 gd GS t Turn-On Delay Time 13 19 V = -15V d(on) DD t Rise Time 13 20 I = -1.0A r D ns t Turn-Off Delay Time 34 51 R = 6.0 d(off) G t Fall Time 32 48 R = 15 f D C Input Capacitance 710 V = 0V iss GS C Output Capacitance 380 pF V = -25V oss DS C Reverse Transfer Capacitance 180 = 1.0MHz, See Fig.5 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I -2.5 S (Body Diode) showing the A Pulsed Source Current integral reverse I -30 SM (Body Diode) p-n junction diode. V Diode Forward Voltage -0.78 -1.0 V T = 25C,I = -1.7A,V = 0V SD J S GS t Reverse Recovery Time 44 66 ns T = 25C ,I = -1.7A, rr J F Q Reverse Recovery Charge 42 63 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. (See Fig. 11) Starting T = 25C, L = 35mH, R = 25, I = -2.8A. J G AS I -2.8A, di/dt 150A/s, V V , T 150C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. Surface mounted on FR-4 board , t sec. 2 2015-9-30