AUTOMOTIVE GRADE AUIRF7736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V 40V (BR)DSS Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications R typ. 2.5m DS(on) Exceptionally Small Footprint and Low Profile max. 3.0m High Power Density I 108A D (Silicon Limited) Low Parasitic Parameters Q 72nC Dual Sided Cooling g (typical) 175C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free S S Automotive Qualified * G D D S S M4 DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description The AUIRF7736M2 combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging platform coupled with the latest silicon technology allows the AUIRF7736M2 to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRF7736M2 DirectFET Medium Can AUIRF7736M2TR Tape and Reel 4800 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units V Drain-to-Source Voltage 40 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 108 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 77 D C GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 22 A D A GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 179 D C GS I Pulsed Drain Current 432 DM P T = 25C Power Dissipation 63 D C W P T = 25C Power Dissipation 2.5 D A E Single Pulse Avalanche Energy (Thermally Limited) 54 AS mJ E (Tested) Single Pulse Avalanche Energy 286 AS A I Avalanche Current AR See Fig. 16, 17, 18a, 18b E Repetitive Avalanche Energy mJ AR T Peak Soldering Temperature 270 P C T Operating Junction and -55 to + 175 J T Storage Temperature Range STG HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-5 AUIRF7736M2TR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 60 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 R C/W JA Junction-to-Can 2.4 R J-Can R Junction-to-PCB Mounted 1.0 J-PCB Linear Derating Factor 0.42 W/C Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.03 V/C Reference to 25C, I = 1.0mA V / T D (BR)DSS J 2.5 3.0 V = 10V, I = 65A R Static Drain-to-Source On-Resistance m GS D DS(on) V Gate Threshold Voltage 2.0 3.0 4.0 V GS(th) V = V , I = 150A DS GS D V / T Gate Threshold Voltage Coefficient -9.0 mV/C GS(th) J gfs Forward Transconductance 115 S V = 10V, I = 65A DS D R Internal Gate Resistance 1.0 G 5.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 72 108 V = 20V g DS Q Gate-to-Source Charge 15 V = 10V GS gs1 I = 65A Q Gate-to-Source Charge 6.3 gs2 D nC Q Gate-to-Drain Mille) Charge 26 See Fig.11 gd Q Gate Charge Overdrive 24.7 godr Q Switch Charge (Q + Q) 32.3 sw gs2 gd Q Output Charge 31 V = 16V, V = 0V oss nC DS GS t Turn-On Delay Time 21 V = 20V, V = 10V d(on) DD GS t Rise Time 43 I = 65A r D ns t Turn-Off Delay Time 39 R = 6.8 d(off) G t Fall Time 27 f C Input Capacitance 4267 V = 0V iss GS C Output Capacitance 943 V = 25V DS oss C Reverse Transfer Capacitance 422 = 1.0 MHz rss pF C Output Capacitance 3489 V = 0V, V = 1.0V, = 1.0 MHz oss GS DS C Output Capacitance 843 V = 0V, V = 32V, = 1.0 MHz oss GS DS C eff. Effective Output Capacitance 1222 V = 0V, V = 0V to 32V oss GS DS Notes through are on page 3 2 2015-10-5