AUTOMOTIVE GRADE AUIRFN8458 Features V 40V DSS Advanced Process Technology Dual N-Channel MOSFET R typ. DS(on) 8.0m Ultra Low On-Resistance max 10m 175C Operating Temperature Fast Switching I D Repetitive Avalanche Allowed up to Tjmax 43A ( T = 25C C (Bottom) Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and DUAL PQFN 5X6 mm improved repetitive avalanche rating. These features combine to make this product an extremely efficient and G D S reliable device for use in Automotive and wide variety of other applications. Gate Drain Source Applications 12V Automotive Systems Low Power Brushed Motor Braking Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity AUIRFN8458 Dual PQFN 5mm x 6mm Tape and Reel 4000 AUIRFN8458TR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 43 D C (Bottom) GS I T = 100C Continuous Drain Current, V 10V 30 A D C (Bottom) GS I Pulsed Drain Current 180 DM P T = 25C Power Dissipation 34 W D C (Bottom) Linear Derating Factor 0.23 W/C V Gate-to-Source Voltage 20 V GS mJ E Single Pulse Avalanche Energy (Thermally Limited) 35 AS E (Tested) Single Pulse Avalanche Energy 37 AS A I Avalanche Current See Fig. 14, 15, 22a, 22b AR E Repetitive Avalanche Energy AR T Operating Junction and -55 to + 175 J C T Storage Temperature Range STG HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at AUIRFN8458 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 4.4 R (Bottom) JC R (Top) Junction-to-Case 50 JC C/W R Junction-to-Ambient 105 JA Junction-to-Ambient 82 R (<10s) JA Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 37 mV/C Reference to 25C, I = 1.0mA V /T D (BR)DSS J 8.0 10 V = 10V, I = 26A R Static Drain-to-Source On-Resistance m DS(on) GS D V Gate Threshold Voltage 2.2 3.9 V V = V , I = 25A GS(th) DS GS D gfs Forward Transconductance 56 S V = 10V, I = 26A DS D R Internal Gate Resistance 1.9 G 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 22 33 I = 26A g D Q Gate-to-Source Charge 6.3 V = 20V gs DS nC Q Gate-to-Drain Mille) Charge 7.6 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 14.4 I = 26A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 9.7 V = 26V d(on) DD t Rise Time 71 I = 26A D r ns t Turn-Off Delay Time 11 R = 2.7 d(off) G V = 10V t Fall Time 19 f GS C Input Capacitance 1060 V = 0V iss GS C Output Capacitance 170 V = 25V oss DS C Reverse Transfer Capacitance 100 pF = 1.0 MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 210 V = 0V, V = 0V to 32V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 250 V = 0V, V = 0V to 32V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D Continuous Source Current 43 MOSFET symbol I A S (Body Diode) showing the G Pulsed Source Current 180 integral reverse I A SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 26A, V = 0V SD J S GS dv/dt Peak Diode Recovery 8.2 V/ns T = 175C, I = 26A, V = 40V J S DS 18 T = 25C J t Reverse Recovery Time ns rr V = 34V, R 19 T = 125C J I = 26A F 9.6 T = 25C J Q Reverse Recovery Charge nC rr di/dt = 100A/s 11 T = 125C J I Reverse Recovery Current 0.89 A T = 25C RRM J 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback October 17, 2014