AUTOMOTIVE GRADE AUIRFR2905Z Features V 55V DSS Advanced Process Technology R typ. 11.1m DS(on) Ultra Low On-Resistance 175C Operating Temperature max. 14.5m Fast Switching I 59A D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax I 42A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D S Description G Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to D-Pak achieve extremely low on-resistance per silicon area. Additional AUIRFR2905Z features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . G D S These features combine to make this design an extremely efficient Gate Drain Source and reliable device for use in Automotive applications and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 AUIRFR2905Z AUIRFR2905Z D-Pak Tape and Reel Left 3000 AUIRFR2905ZTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 59 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 42 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 42 D C GS I Pulsed Drain Current 240 DM P T = 25C Maximum Power Dissipation 110 W D C Linear Derating Factor 0.72 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 55 AS mJ E (Tested) Single Pulse Avalanche Energy Tested Value 82 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.38 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-12 AUIRFR2905Z Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.053 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 11.1 14.5 m V = 10V, I = 36A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 20 S V = 25V, I = 36A DS D R Gate Input Resistance 1.3 = 1.0MHz , open drain G 20 V = 55 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 29 44 I = 36A g D Q Gate-to-Source Charge 7.7 nC V = 44V gs DS Q Gate-to-Drain Charge 12 V = 10V gd GS t Turn-On Delay Time 14 V = 28V d(on) DD t Rise Time 66 I = 36A r D ns t Turn-Off Delay Time 31 R = 15 d(off) G t Fall Time 35 V = 10V GS f Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 1380 V = 0V iss GS C Output Capacitance 240 V = 25V oss DS C Reverse Transfer Capacitance 120 = 1.0MHz rss pF C Output Capacitance 820 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 190 V = 0V, V = 44V = 1.0MHz oss GS DS C Effective Output Capacitance 300 V = 0V, V = 0V to 44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 42 S (Body Diode) showing the A Pulsed Source Current integral reverse I 240 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 36A,V = 0V SD J S GS t Reverse Recovery Time 23 35 ns T = 25C ,I = 36A, V = 28V rr J F DD Q Reverse Recovery Charge 16 24 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.08mH, R = 25 , I = 36A, V =10V. Part not recommended for use above this value. Jmax , J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population. 100% tested to this value in production. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C J Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42A. 2 2015-10-12