+, 96398A AUTOMOTIVE GRADE AUIRFR4615 AUIRFU4615 Features HEXFET Power MOSFET Advanced Process Technology D Low On-Resistance V 150V DSS 175C Operating Temperature Fast Switching R typ. 34m DS(on) Repetitive Avalanche Allowed up to Tjmax G max. 42m Lead-Free, RoHS Compliant Automotive Qualified * I 33A D S Description D D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon S area. Additional features of this design are a 175C junction S D operating temperature, fast switching speed and improved G G repetitive avalanche rating . These features combine to make DPak IPAK this design an extremely efficient and reliable device for use in AUIRFR4615 AUIRFU4615 Automotive applications and a wide variety of other applications. GD S Gate Drain Source Absolute Maximum Ratings functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. % & ()* Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 33 D C GS I T = 100C Continuous Drain Current, V 10V 24 A D C GS I 140 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 144 W D C 0.96 Linear Derating Factor W/C V V Gate-to-Source Voltage 20 GS Single Pulse Avalanche Energy E 109 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR dv/dt Peak Diode Recovery 38 V/ns T Operating Junction and -55 to + 175 J T C Storage Temperature Range STG Soldering Temperature, for 10 seconds 300(1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case JC 1.045 R C/W Junction-to-Ambient (PCB Mount) 50 JA R Junction-to-Ambient 110 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.19 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 34 42 V = 10V, I = 21A DS(on) m GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 100 A GS(th) DS GS D gfs Forward Transconductance 35 S V = 50V, I = 21A DS D I Drain-to-Source Leakage Current 20 V = 150V, V = 0V DSS DS GS A 250 V = 150V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.7 G(int) Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 26 I = 21A g D Q Gate-to-Source Charge 8.6 V = 75V gs DS nC Q Gate-to-Drain Mille) Charge 9.0 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 17 I = 21A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 15 V = 98V d(on) DD t Rise Time 35 I = 21A r D ns t Turn-Off Delay Time 25 R = 7.3 d(off) G t Fall Time 20 V = 10V f GS C Input Capacitance 1750 V = 0V iss GS C Output Capacitance 155 V = 50V oss DS C Reverse Transfer Capacitance 40 = 1.0MHz (See Fig.5) pF rss C eff. (ER) 179 V = 0V, V = 0V to 120V (See Fig.11) oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 382 V = 0V, V = 0V to 120V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 33 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 140 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 21A, V = 0V SD J S GS t T = 25C V = 100V, Reverse Recovery Time 70 rr J R ns 83 T = 125C I = 21A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 177 rr J nC T = 125C 247 J I Reverse Recovery Current 4.9 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on C eff. (TR) is a fixed capacitance that gives the same charging time oss Repetitive rating pulse width limited by max. junction as C while V is rising from 0 to 80% V . oss DS DSS temperature. C eff. (ER) is a fixed capacitance that gives the same energy as oss Limited by T , starting T = 25C, L = 0.51mH Jmax J C while V is rising from 0 to 80% V . oss DS DSS R = 25, I = 21A, V =10V. Part not recommended for use G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recom above this value . mended footprint and soldering techniques refer to application I 21A, di/dt 549A/s, V V , T 175C. SD DD (BR)DSS J note AN-994 Pulse width 400s duty cycle 2%. 2 www.irf.com