AUTOMOTIVE GRADE AUIRFR5410 Features HEXFET Power MOSFET Advanced Planar Technology V -100V DSS P-Channel MOSFET Low On-Resistance R max. 0.205 DS(on) Dynamic dV/dT Rating 175C Operating Temperature I -13A D Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * Description S G Specifically designed for Automotive applications, this Cellular Planar design of HEXFET Power MOSFETs utilizes the latest D-Pak processing techniques to achieve low on-resistance per silicon AUIRFR5410 area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well G D S known for, provides the designer with an extremely efficient and Gate Drain Source reliable device for use in Automotive and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 AUIRFR5410 AUIRFR5410 D-Pak Tape and Reel Left 3000 AUIRFR5410TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V -10V -13 D C GS I T = 100C Continuous Drain Current, V -10V -8.2 D C GS A I Pulsed Drain Current -52 DM P T = 25C Maximum Power Dissipation 66 W D C Linear Derating Factor 0.53 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 194 AS mJ I Avalanche Current -8.4 A AR E Repetitive Avalanche Energy 6.3 mJ AR dv/dt Pead Diode Recovery dv/dt -5.0 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.9 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-2 AUIRFR5410 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient -0.12 V/C Reference to 25C, I = -1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 0.205 V = -10V, I = -7.8A DS(on) GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D gfs Forward Trans conductance 3.2 S V = -25V, I = -7.8A DS D -25 V = -100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -80V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 58 I = -8.4A g D Q Gate-to-Source Charge 8.3 nC V = -80V gs DS Q Gate-to-Drain Charge 32 V = -10V gd GS t Turn-On Delay Time 15 V = -50V d(on) DD t Rise Time 58 I = -8.4A r D ns t Turn-Off Delay Time 45 R = 9.1 d(off) G t Fall Time 46 R = 6.2 f D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 760 V = 0V iss GS C Output Capacitance 260 pF V = -25V oss DS C Reverse Transfer Capacitance 170 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I -13 S (Body Diode) showing the A Pulsed Source Current integral reverse I -52 SM (Body Diode) p-n junction diode. V Diode Forward Voltage -1.6 V T = 25C,I = -7.8A, V = 0V SD J S GS t Reverse Recovery Time 130 190 ns T = 25C ,I = -8.4A rr J F Q Reverse Recovery Charge 650 970 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Starting T = 25C, L = 6.4mH, R = 25 , I = -7.8A (See fig. 12) J G AS I -7.8A, di/dt 200A/s, V V , T 150C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRF9530N data and test conditions. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C J 2 2015-12-2