AUIRFZ44NS AUTOMOTIVE GRADE AUIRFZ44NL HEXFET Power MOSFET Features Advanced Planar Technology V 55V DSS Low On-Resistance Dynamic dV/dT and dI/dT capability R max. 17.5m DS(on) 175C Operating Temperature Fast Switching I 49A D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S Specifically designed for Automotive applications, this HEXFET D G G Power MOSFET utilizes the latest processing techniques to achieve 2 D Pak TO-262 extremely low on-resistance per silicon area. Additional features of AUIRFZ44NL AUIRFZ44NS this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These G D S features combine to make this design an extremely efficient and Gate Drain Source reliable device for use in Automotive applications and a wide variety of other applications Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFZ44NL TO-262 Tube 50 AUIRFZ44NL Tube 50 AUIRFZ44NS 2 AUIRFZ44NS D -Pak Tape and Reel Left 800 AUIRFZ44NSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 49 D C GS A I T = 100C Continuous Drain Current, V 10V 35 D C GS I Pulsed Drain Current 160 DM P T = 25C Maximum Power Dissipation 3.8 D A W P T = 25C Maximum Power Dissipation 94 D C Linear Derating Factor 0.63 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 150 AS (Thermally Limited) mJ E Single Pulse Avalanche Energy (Tested Limited) 530 AS (Tested) I Avalanche Current 25 A AR E Repetitive Avalanche Energy 9.4 mJ AR dv/dt Peak Diode Recovery 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.5 JC C/W 2 Junction-to-Ambient (PCB Mount), DPak 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-27 AUIRFZ44NS/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.058 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 17.5 m V = 10V, I = 25A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 19 S V = 25V, I = 25A DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V,V = 0V,T =150C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 63 I = 25A g D Q Gate-to-Source Charge 14 nC V = 44V gs DS Q Gate-to-Drain Charge 23 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 12 V = 28V d(on) DD t Rise Time 60 I = 25A r D ns t Turn-Off Delay Time 44 R = 12 d(off) G Fall Time 45 V = 10V, See Fig. 10 t f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 1470 V = 0V iss GS C Output Capacitance 360 pF V = 25V oss DS C Reverse Transfer Capacitance 88 = 1.0MHz, See Fig. 5 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 49 S (Body Diode) showing the A Pulsed Source Current integral reverse I 160 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 25A,V = 0V SD J S GS t Reverse Recovery Time 63 95 ns T = 25C ,I = 25A rr J F Q Reverse Recovery Charge 170 260 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig.11) Limited by T starting T = 25C, L = 0.48mH, R = 25 , I = 25A, V =10V. (See fig.12) Jmax, J G AS GS I 25A, di/dt 230A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to T = 175C . J 2 2015-10-27