AUTOMOTIVE GRADE Features V 55V (BR)DSS % R max. 8.0m DS(on) & &% I 58A D % ( ) & * + % ,% - . Description Specifically designed for Automotive applications, this cellular design of HEXFET Power MOSFETs S utilizes the latest processing techniques to achieve D G low on-resistance per silicon area. This benefit combined with the fast switching speed and rug- TO-220AB Full-Pak gedized device design that HEXFET power AUIRLI2505 MOSFETs are well known for, provides the de- signer with an extremely efficient and reliable de- GD S vice for use in Automotive and a wide variety of Gate Drain Source other applications. Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 58 GS D C Continuous Drain Current, V 10V 41 I T = 100C A GS D C 360 I Pulsed Drain Current DM Power Dissipation 63 W P T = 25C D C Linear Derating Factor 0.42 W/C Gate-to-Source Voltage 16 V V GS E 500 Single Pulse Avalanche Energy (Thermally Limited) mJ AS I 54 Avalanche Current A AR E Repetitive Avalanche Energy 6.3 mJ AR 5.0 dv/dt Peak Diode Recovery dv/dt V/ns -55 to + 175 T Operating Junction and J Storage Temperature Range C T STG Soldering Temperature, for 10 seconds (1.6mm from case ) 300 10 lbf in (1.1N m) Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.4 C/W JC RJunction-to-Ambient 65 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250 A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.035 V/C Reference to 25C, I = 1mA (BR)DSS J D 8.0 VGS = 10V, ID = 31A R Static Drain-to-Source On-Resistance 10 m V = 5.0V, I = 31A DS(on) GS D 13 V = 4.0V, I = 26A GS D VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250A = 25V, I = 54A gfs Forward Transconductance 59 S VDS D I Drain-to-Source Leakage Current 25 A V = 55V, V = 0V DSS DS GS 250 V = 44V, V = 0V, T = 150C DS GS J IGSS Gate-to-Source Forward Leakage 100 nA VGS = 16V Gate-to-Source Reverse Leakage -100 V = -16V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge 130 ID = 54A Q Gate-to-Source Charge 25 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 67 V = 5.0V, See Fig. 6&13 gd GS td(on) Turn-On Delay Time 12 VDD = 28V tr Rise Time 160 ID = 54A t Turn-Off Delay Time 43 ns R = 1.3 V = 5.0V d(off) G GS t Fall Time 84 R = 0.50, See Fig. 10 f D D L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact Ciss Input Capacitance 5000 VGS = 0V C Output Capacitance 1100 pF V = 25V oss DS = 1.0MHz, See Fig. 5 C Reverse Transfer Capacitance 390 rss C Drain to Sink Capacitance 12 = 1.0MHz Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 58 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 360 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 31A, V = 0V SD J S GS t Reverse Recovery Time 140 210 ns T = 25C, I = 54A rr J F di/dt = 100A/s Q Reverse Recovery Charge 650 970 nC rr t Forward Turn-On Time Intrins ic turn-on time is negligible (turn-on is dominated by LS+LD) on 4 . 5 % 6 ) 7 6 /8 & (&) * (+,) - ./ Uses IRL2505 data and test conditions. ( ) 0 ( 1 2 % R is measured at Tj at approximately 90C. I ( 1) 1 . ) & & ) SD * 3(+, 2 www.irf.com