AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology V 40V Ultra Low On-Resistance DSS Logic Level Gate Drive R typ. DS(on) 4.9m 175C Operating Temperature max. 6.5m Fast Switching I 130A D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax I 42A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this HEXFET S S Power MOSFET utilizes the latest processing techniques to D G G achieve extremely low on-resistance per silicon area. Additional D-Pak I-Pak features of this design are a 175C junction operating temperature, AUIRLR3114Z AUIRLU3114Z fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient G D S and reliable device for use in Automotive applications and a wide variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRLU3114Z I-Pak Tube 75 AUIRLU3114Z Tube 75 AUIRLR3114Z AUIRLR3114Z D-Pak Tape and Reel Left 3000 AUIRLR3114ZTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 130 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 89 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 42 D C GS I Pulsed Drain Current 500 DM P T = 25C Maximum Power Dissipation 140 W D C Linear Derating Factor 0.95 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy (Thermally Limited) 130 AS mJ E (Tested) Single Pulse Avalanche Energy Tested Value 260 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.05 JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-29 AUIRLR/U3114Z Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.032 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D 3.9 4.9 V = 10V, I = 42A GS D R Static Drain-to-Source On-Resistance m DS(on) 5.2 6.5 V = 4.5V, I = 42A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 100A GS(th) DS GS D gfs Forward Trans conductance 98 S V = 10V, I = 42A DS D 20 V = 40 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 40 56 I = 42A g D Q Gate-to-Source Charge 12 nC V = 20V gs DS Q Gate-to-Drain Charge 18 V = 4.5V gd GS t Turn-On Delay Time 25 V = 20V d(on) DD t Rise Time 140 I = 42A r D ns t Turn-Off Delay Time 33 R = 3.7 d(off) G t Fall Time 50 V = 4.5V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 3810 V = 0V iss GS C Output Capacitance 650 V = 25V oss DS C Reverse Transfer Capacitance 350 = 1.0MHz rss pF C Output Capacitance 2390 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 580 V = 0V, V = 32V = 1.0MHz oss GS DS C Effective Output Capacitance 820 V = 0V, V = 0V to 32V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 42 S (Body Diode) showing the A integral reverse Pulsed Source Current I 500 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 42A,V = 0V SD J S GS t Reverse Recovery Time 30 45 ns = 25C ,I = 42A, V = 20V T rr J F DD Q Reverse Recovery Charge 27 41 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.15mH, R = 25 , I = 42A, V =10V. Part not recommended for use above this value. Jmax , J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population. 100% tested to this value in production. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 . R is measured at T approximately 90C J Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 42A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 2015-10-29