AUIRLS4030 AUTOMOTIVE GRADE AUIRLSL4030 Features HEXFET Power MOSFET Optimized for Logic Level Drive Advanced Process Technology D V 100V DSS Ultra Low On-Resistance R typ. 3.4m Logic Level Gate Drive DS(on) G 175C Operating Temperature max 4.3m Fast Switching S Repetitive Avalanche Allowed up to Tjmax I 180A D Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this HEXFET S S Power MOSFET utilizes the latest processing techniques to D G G achieve extremely low on-resistance per silicon area. Additional 2 TO-262 features of this design are a 175C junction operating tempera- D Pak AUIRLSL4030 AUIRLS4030 ture, fast switching speed and improved repetitive avalanche rat- ing . These features combine to make this design an extremely G D S efficient and reliable device for use in Automotive applications and a wide variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRLSL4030 TO-262 Tube 50 AUIRLSL4030 Tube 50 AUIRLS4030 2 AUIRLS4030 D -Pak Tape and Reel Left 800 AUIRLS4030TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 180 D C GS I T = 100C Continuous Drain Current, V 10V 130 A D C GS I Pulsed Drain Current 730 DM P T = 25C Power Dissipation 370 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy (Thermally limited) 305 mJ AS I Avalanche Current See Fig. 14, 15, 22a, 22b A AR mJ E Repetitive Avalanche Energy AR dv/dt Peak Diode Recovery 21 V/ns T Operating Junction and -55 to + 175 J C T Storage Temperature Range STG Soldering Temperature for 10 seconds 300(1.6mm from case) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.4 R JC C/W R Junction-to-Ambient (PCB Mount), D2 Pak 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-6 AUIRLS/SL4030 Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 5mA V / T (BR)DSS J D 3.4 4.3 V = 10V, I = 110A GS D R Static Drain-to-Source On-Resistance m DS(on) 3.6 4.5 V = 4.5V, I = 92A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 320 S V = 25V, I = 110A DS D 20 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 16V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS R Internal Gate Resistance 2.1 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 87 130 I = 110A g D Q Gate-to-Source Charge 27 V = 50V gs DS nC Q Gate-to-Drain Mille) Charge 45 V = 4.5V gd GS Q Total Gate Charge Sync. (Q - Q) 42 sync g gd t Turn-On Delay Time 74 V = 65V d(on) DD t Rise Time 330 I = 110A r D ns t Turn-Off Delay Time 110 R = 2.7 d(off) G t Fall Time 170 V = 4.5V GS f C Input Capacitance 11360 V = 0V iss GS V = 50V C Output Capacitance 670 oss DS = 1.0 MHz C Reverse Transfer Capacitance 290 pF rss C eff. (ER) Effective Output Capacitance (Energy Related) 760 V = 0V, V = 0V to 80V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 1140 V = 0V, V = 0V to 80V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 180 S (Body Diode) showing the A Pulsed Source Current integral reverse I 730 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 110A, V = 0V SD J S GS 50 T = 25C J V = 85V, R t Reverse Recovery Time ns rr 60 T = 125C J I = 110A F 88 T = 25C J di/dt = 100A/s Q Reverse Recovery Charge nC rr 130 T = 125C J I Reverse Recovery Current 3.3 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.05mH, R = 25 , I = 110A, V =10V. Part not recommended for use above this value. Jmax J G AS GS I 110A, di/dt 1330A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994. R value shown is at time zero. JC 2 2015-11-6