BSC014N03MS G OptiMOS3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 1.4 m DS(on),max GS Low FOM for High Frequency SMPS SW V =4.5 V 1.75 GS 100% avalanche tested I 100 A D N-channel PG-TDSON-8 Very low on-resistance R V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS(on) 1) Qualified according to JEDEC for target applications Superior thermal resistance Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC014N03MS G PG-TDSON-8 014N03MS Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25 C Continuous drain current 100 A D GS C V =10 V, T =100 C 100 GS C V =4.5 V, T =25 C 100 GS C V =4.5 V, GS 100 T =100 C C V =4.5 V, T =25 C, GS A 30 2) R =50 K/W thJA 3) I T =25 C 400 Pulsed drain current D,pulse C 4) I T =25 C 50 Avalanche current, single pulse AS C E Avalanche energy, single pulse I =50 A, R =25 340 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 Rev. 1.5 page 1 2009-10-22BSC014N03MS G Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25 C Power dissipation 139 W tot C T =25 C, A 2.5 2) R =50 K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case bottom - - 0.9 K/W thJC top - - 20 2 2) R Device on PCB - - 50 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =250 A 1 - 2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 100 T =125 C j Gate-source leakage current I V =16 V, V =0 V - 10 100 nA GSS GS DS R V =4.5 V, I =30 A Drain-source on-state resistance - 1.4 1.75 m DS(on) GS D V =10 V, I =30 A - 1.2 1.4 GS D R Gate resistance 0.7 1.5 2.6 G V >2 I R , DS D DS(on)max Transconductance g 70 140 - S fs I =30 A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 1.5 page 2 2009-10-22