BSC018N04LS G OptiMOS3 Power-Transistor Product Summary V 40 V Features DS R 1.8 m DS(on),max Fast switching MOSFET for SMPS I 100 A Optimized technology for DC/DC converters D 1) Qualified according to JEDEC for target applications PG-TDSON-8 N-channel Logic level Excellent gate charge x RDS(on) product (FOM) Very low on-resistance RDS(on) Superior thermal resistance 100% Avalanche tested Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC018N04LS G PG-TDSON-8 018N04LS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I V =10 V, T =25 C Continuous drain current 100 A D GS C V =10 V, T =100 C 100 GS C V =4.5 V, T =25 C 100 GS C V =4.5 V, GS 100 T =100 C C V =10 V, T =25 C, GS A 30 2) R =50 K/W thJA 3) I T =25 C 400 Pulsed drain current D,pulse C 4) I T =25 C 50 Avalanche current, single pulse AS C Avalanche energy, single pulse E I =50 A, R =25 295 mJ AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 Rev. 1.4 page 1 2009-10-22BSC018N04LS G Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25 C Power dissipation 125 W tot C T =25 C, A 2.5 2) R =50 K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R bottom - - 1 K/W thJC top 18 2 2) Device on PCB R -- 50 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =85 A 1.2 - 2 GS(th) DS GS D V =40 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =40 V, V =0 V, DS GS - 10 100 T =125 C j Gate-source leakage current I V =20 V, V =0 V - 10 100 nA GSS GS DS R V =4.5 V, I =50 A Drain-source on-state resistance - 2.0 2.5 m DS(on) GS D V =10 V, I =50 A - 1.5 1.8 GS D R Gate resistance - 1.3 - G V >2 I R , DS D DS(on)max Transconductance g 90 180 - S fs I =50 A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 1.4 page 2 2009-10-22