BSC054N04NS G OptiMOS3 Power-Transistor Product Summary V 40 V Features DS R 5.4 Fast switching MOSFET for SMPS mW DS(on),max Optimized technology for DC/DC converters I 81 A D 1) Qualified according to JEDEC for target applications PG-TDSON-8 N-channel Normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superior thermal resistance 100% Avalanche rated Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC054N04NS G PG-TDSON-8 054N04NS Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25C Continuous drain current 81 A D GS C V =10 V, T =100C 52 GS C V =10 V, T =25C, GS A 17 2) R =50K/W thJA 3) I T =25C 324 Pulsed drain current D,pulse C 4) I T =25C 50 Avalanche current, single pulse AS C E I =50A, R =25W Avalanche energy, single pulse 35 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 Rev. 2.1 page 1 2013-05-17BSC054N04NS G Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25C Power dissipation 57 W tot C T =25 C, A 2.5 2) R =50K/W thJA Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case bottom - - 2.2 K/W thJC top - - 20 2 2) Device on PCB R - - 50 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 40 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =27A 2 - 4 GS(th) DS GS D V =40V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =40V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 10 100 nA GSS GS DS R V =10V, I =50A Drain-source on-state resistance - 4.5 5.4 mW DS(on) GS D R Gate resistance - 1.5 - W G V >2 I R , DS D DS(on)max g Transconductance 34 67 - S fs I =50A D 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.1 page 2 2013-05-17