BSC094N06LS5ATMA1 Infineon

Name: BSC094N06LS5ATMA1
Brand: Infineon
SKU: BSC094N06LS5ATMA1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

BSC094N06LS5ATMA1 electronic component of Infineon

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSC094N06LS5ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSC094N06LS5ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	BSC094N06LS5ATMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET DIFFERENTIATED MOSFETS
Datasheet:	BSC094N06LS5ATMA1 Datasheet (PDF)

Price (USD)

1: USD 1.8888 ea
Line Total: USD 1.89

Availability : 80

Ship by Fri. 21 Nov to Thu. 27 Nov

Qty Unit Price
1 $ 1.8888
10 $ 1.5462
30 $ 0.927
100 $ 0.7804
500 $ 0.7108
1000 $ 0.677

BSC094N06LS5ATMA1 More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 80

Ship by Fri. 21 Nov to Thu. 27 Nov

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 1.8888
10 $ 1.5462
30 $ 0.927
100 $ 0.7804
500 $ 0.7108
1000 $ 0.677

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

47 A 47 A

Vds - Drain-Source Breakdown Voltage

60 V 60 V

Rds On - Drain-Source Resistance

9.4 mOhms 9.4 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

1.1 V 1.1 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

36 W 36 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

PG - TDSON - 8 PG - TDSON - 8

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

7 nC 7 nC

Channel Mode

Enhancement Enhancement

Tradename

Optimos Optimos

Configuration

Single Single

Series

Optimos 5 Optimos 5

Transistor Type

1 N - Channel 1 N - Channel

Brand

Infineon Technologies Infineon Technologies

Forward Transconductance - Min

22 S 22 S

Cnhts

8541210000 8541210000

Fall Time

3 ns 3 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

3 ns 3 ns

Factory Pack Quantity :

5000 5000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

14 ns 14 ns

Typical Turn-On Delay Time

4 ns 4 ns

Notes:- Show Stocked Products With Similar Attributes.

BSC094N06LS5ATMA1 Alternative Parts

We are delighted to provide the BSC094N06LS5ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSC094N06LS5ATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The BSC094N06LS5ATMA1 with MOSFET DIFFERENTIATED MOSFETS, manufactured by Infineon, is an advanced insulated-gate bipolar transistor (IGBT) that delivers superior switching and thermal performance. The device features low on-state resistance and low gate drive power, as well as an integrated desaturation detection circuit and temperature warning outputs. With its wide range of support for low gate operating voltage and up to 600V blocking voltage, this MOSFET is ideal for DC/DC conversion in motor drives, industrial robotics, solar inverters, and other AC/DC applications. It is capable of delivering improved efficiency and long-term reliability with no compromise on the performance. With excellent switching characteristics, this MOSFET offers better overall system performance for higher power density applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Qty	Unit Price
1	$ 1.8888
10	$ 1.5462
30	$ 0.927
100	$ 0.7804
500	$ 0.7108
1000	$ 0.677

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