BSC150N03LD G OptiMOS3 Power-Transistors Product Summary Features V 30 V DS Dual N-channel, logic level R 15 m DS(on),max Fast switching MOSFETs for SMPS I 20 A D PG-TDSON-8 Optimized technology for DC/DC converters 1) Qualified according to JEDEC for target applications Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superior thermal resistance 100% Avalanche tested Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC150N03LD G PG-TDSON-8 150N03LD =25 C, unless otherwise specified Maximum ratings, at T j Parameter Symbol Conditions Value Unit 10 secs steady state Continuous drain current I V =10 V, T =25 C 20 A D GS C V =10 V, T =100 C 20 GS C V =4.5 V, T =25 C 20 GS C V =4.5 V, GS 17 T =100 C C 3) 12.4 8 V =10 V, T =25 C GS A 2) I T =25 C 80 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =20 A, R =25 10 mJ AS D GS V 20 Gate source voltage V GS Power dissipation P T =25 C 26 W tot C 3) T =25 C 3.6 1.5 A Operating and storage temperature T , T -55 ... 150 C j stg 55/150/56 IEC climatic category DIN IEC 68-1 1) J-STD20 and JESD22 Rev. 1.4 page 1 2009-11-04BSC150N03LD G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case bottom - - 4.9 K/W thJC top 20 R t10 s - - 35 thJA Thermal resistance, junction - 3) ambient, 6 cm cooling area steady state - - 85 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 30 - - V (BR)DSS GS D V V =V , I =250 A Gate threshold voltage 1 - 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =20 A - 17.6 22 m DS(on) GS D V =10 V, I =20 A - 12.5 15 GS D Gate resistance R - 1.2 1.8 G V >2 I R , DS D DS(on)max g Transconductance 18 35 - S fs I =20 A D 2) See figure 3 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. One transistor active. Rev. 1.4 page 2 2009-11-04