Type BSC160N10NS3 G TM (* % 3 Power-Transistor Product Summary V 100 V DS 9 .1)+ )7% &- / - ,3% /0)- , R 16 m DS(on),max 9 ( ,,% * ,- /+ * *% 3% * I 42 A D 9 5 % **% ,1 1% ( / % 5 R product (FOM) DS(on) 9 % /6 *- 4 - , /% 0)01 , % R DS(on) PG-TDSON-8 9 8 - .% / 1), 1% + .% / 12 /% 9 &/% % *% .* 1), - - + .*) ,1 1) 9 2 *)&)% - / ), 1- for target application 9 *- % , &/% % - / ), 1- Type Package Marking BSC160N10NS3 G PG-TDSON-8 160N10NS Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 42 A D C T =100 C 27 C T =25 C, A 8.8 2) R =50 K/W thJA 3) I T =25 C 168 Pulsed drain current D,pulse C E I =33 A, R =25 Avalanche energy, single pulse 50 mJ AS D GS Gate source voltage V 20 V GS P T =25 C Power dissipation 60 W tot C T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev. 2.4 page 1 2009-10-30BSC160N10NS3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 2.1 K/W thJC Thermal resistance, 2 2) R - - 50 thJA 6 cm cooling area junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 100 - - V (BR)DSS GS D V V =V , I =33 A Gate threshold voltage 2 2.7 3.5 GS(th) DS GS D V =100 V, V =0 V, DS GS Zero gate voltage drain current I - 0.01 1 A DSS T =25 C j V =100 V, V =0 V, DS GS - 10 100 T =125 C j Gate-source leakage current I V =20 V, V =0 V - 1 100 nA GSS GS DS R V =10 V, I =33 A Drain-source on-state resistance - 13.9 16 m DS(on) GS D V =6 V, I =16 A - 17.6 33 GS D Gate resistance R - 1.4 - G V >2 I R , DS D DS(on)max g Transconductance 21 42 - S fs I =33 A D 1) J-STD20 and JESD22 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) see figure 3 Rev. 2.4 page 2 2009-10-30