Type BSC900N20NS3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 200 V DS Optimized for dc-dc conversion R 90 m DS(on),max N-channel, normal level I 15.2 A D Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TDSON-8 150 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Type Package Marking BSC900N20NS3 G PG-TDSON-8 900N20NS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 15.2 A D C T =100 C 10.7 C 2) I T =25 C 61 Pulsed drain current D,pulse C E I =7.6 A, R =25 Avalanche energy, single pulse 100 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s V Gate source voltage 20 V GS Power dissipation P T =25 C 62.5 W tot C T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 2) see figure 3 Rev. 2.2 page 1 2011-05-20BSC900N20NS3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 2 K/W thJC Thermal resistance, 2 3) R -- 50 thJA 6 cm cooling area junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 200 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =30 A 234 GS(th) DS GS D V =160 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =160 V, V =0 V, DS GS - 10 100 T =125 C j Gate-source leakage current I V =20 V, V =0 V - 1 100 nA GSS GS DS R V =10 V, I =7.6 A Drain-source on-state resistance -77 90 m DS(on) GS D Gate resistance R - 2.2 - G V >2 I R , DS D DS(on)max g Transconductance 816 - S fs I =7.6 A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2011-05-20