BSD840N OptiMOS2 Small-Signal-Transistor Product Summary Features V 20 V DS Dual N-channel R V =2.5 V 400 mW DS(on),max GS Enhancement mode V =1.8 V 560 GS Ultra Logic level (1.8V rated) I 0.88 A D Avalanche rated PG-SOT-363 Qualified according to AEC Q101 6 5 4 100% lead-free RoHS compliant Halogen-free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSD840N PG-SOT-363 H6327: 3000 pcs/ reel XBs Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j 1) Value Symbol Conditions Unit Parameter Continuous drain current I T =25C 0.88 A D A T =70C 0.71 A I T =25C Pulsed drain current 3.5 D,pulse A E Avalanche energy, single pulse I =0.88A, R =16W 1.6 mJ AS D GS I =0.88A, V =16V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max Gate source voltage V 8 V GS 2) P T =25C 0.5 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 1) Remark: only one of both transistors in operation. Rev 2.4 page 1 2014-09-19BSD840N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 2) R - - 250 K/W thJA minimal footprint junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 20 - - V (BR)DSS GS D V V =V , I =1.6A Gate threshold voltage 0.3 0.55 0.75 GS(th) DS GS D V =20V, V =0V, DS GS I Drain-source leakage current - - 1 mA DSS T =25C j V =20V, V =0V, DS GS - - 100 T =150C j I V =8V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =1.8V, I =0.19A Drain-source on-state resistance - 373 560 mW DS(on) GS D V =2.5V, I =0.88A - 270 400 GS D V >2 I R , DS D DS(on)max g Transconductance 2.5 - S fs I =0.71A D 2) 2 Performed on 40 mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mm long they are present on both sides of the PCB Rev 2.4 page 2 2014-09-19