Product Information

BSL207SPH6327XTSA1

BSL207SPH6327XTSA1 electronic component of Infineon

Datasheet
Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.2455 ea
Line Total: USD 736.5

2910 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
7257 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 0.6313
10 : USD 0.5428
100 : USD 0.3852
500 : USD 0.3312
1000 : USD 0.2909
3000 : USD 0.2553
6000 : USD 0.2553
9000 : USD 0.2461
24000 : USD 0.2438

2884 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3
Multiples : 1
3 : USD 0.559
25 : USD 0.5031
42 : USD 0.3861
114 : USD 0.3653
1000 : USD 0.3614

2910 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 37
Multiples : 1
37 : USD 1.0192
57 : USD 0.6485
100 : USD 0.5558
200 : USD 0.5265
500 : USD 0.4926
1000 : USD 0.4632
2000 : USD 0.441

2910 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2455
6000 : USD 0.2429
9000 : USD 0.238

     
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
AM29F080B-55EF electronic component of Infineon AM29F080B-55EF

NOR Flash Parallel 5V 8M-bit 1M x 8 55ns 40-Pin TSOP
Stock : 0

ATR2815S/CH electronic component of Infineon ATR2815S/CH

Module DC-DC 1-OUT 15V 2A 30W 10-Pin ATR
Stock : 1

24VSHIELDBTT6030TOBO1 electronic component of Infineon 24VSHIELDBTT6030TOBO1

Power Management IC Development Tools 24V Switch Shield
Stock : 7

65DN06 ELEM electronic component of Infineon 65DN06 ELEM

Infineon Technologies Rectifiers 600V 8.47KA
Stock : 1

6PS04512E43W39693 electronic component of Infineon 6PS04512E43W39693

IGBT Modules STACKS IPM
Stock : 0

6MS10017E41W36460 electronic component of Infineon 6MS10017E41W36460

IGBT Modules STACKS IPM
Stock : 0

2PS12017E44G35911 electronic component of Infineon 2PS12017E44G35911

IGBT Modules STACKS IPM
Stock : 0

24VBATTSWITCHDEMO1 electronic component of Infineon 24VBATTSWITCHDEMO1

Power Management IC Development Tools The 24 V ADR Switch Demonstrator shows a semiconductor based solution of a 24 V battery master switch for trucks as required by the ADR regulation
Stock : 2

AHV2815DF/HBB electronic component of Infineon AHV2815DF/HBB

Module DC-DC 28VIN 2-OUT 15V/-15V 1.5A/-1.5A 15W 10-Pin AHV
Stock : 1

ACICBOARDTOBO1 electronic component of Infineon ACICBOARDTOBO1

Interface Development Tools
Stock : 2

Image Description
NTTFS4928NTAG electronic component of ON Semiconductor NTTFS4928NTAG

N-Channel 30 V 7.3A (Ta), 37A (Tc) 810mW (Ta), 20.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Stock : 1

FDY3000NZ electronic component of ON Semiconductor FDY3000NZ

Transistor: N-MOSFET x2; unipolar; 20V; 0.6A; 0.625W; SOT563
Stock : 9000

SI1330EDL-T1-E3 electronic component of Vishay SI1330EDL-T1-E3

MOSFET 60V Vds 20V Vgs SC70-3
Stock : 1

SSM3J35AMFV,L3F electronic component of Toshiba SSM3J35AMFV,L3F

MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
Stock : 31583

RU30C8H electronic component of Ruichips RU30C8H

MOSFET N & P Trench 30V 8A,7A 2.4V @ 250uA 15 mΩ @ 8A,10V;25 mΩ @ 6A,10V SOP-8_150mil RoHS
Stock : 0

TDM3466 electronic component of Techcode TDM3466

MOSFET N Trench 40V 200A (Tc) 2.5V @ 250uA 2.1 mΩ @ 25A,10V TO-220 RoHS
Stock : 1

CRTD110N03L electronic component of CRMICRO CRTD110N03L

MOSFET N Trench 30V 20A (Tc) 1.8V @ 250uA 11 mΩ @ 12A,10V TO-252 RoHS
Stock : 1

SI2102-TP electronic component of Micro Commercial Components (MCC) SI2102-TP

N-Channel 20 V 2.1A (Tj) 200mW Surface Mount SOT-323
Stock : 0

LNG04R165 electronic component of Lonten Semiconductor LNG04R165

MOSFET N Channel 40V 39A(Tc) 2V @ 250uA 16.5mO @ 10A,10V TO-252 RoHS
Stock : 0

HSBA3056 electronic component of HUASHUO HSBA3056

MOSFET N Channel 30V 73A 2.2V @ 250uA 3.9mΩ @ 20A,10V PRPAK5*6 RoHS
Stock : 3000

Rev. 2.05 BSL207SP OptiMOS -P Small-Signal-Transistor Product Summary Feature V -20 V DS P-Channel R 41 m DS(on) Enhancement mode I -6 A D Super Logic Level (2.5 V rated) P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated 4 3 5 Pb-free lead plating RoHS compliant 2 6 1 QualifiedaccordingtoAECQ101 P-TSOP6-6 HalogenfreeaccordingtoIEC61249221 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and reel Marking Source BSL207SP P-TSOP6-6 H6327:3000 pcs/r. pin 4 sPA Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -6 A T =70C -4.8 A -24 Pulsed drain current I D puls T =25C A 44 mJ Avalanche energy, single pulse E AS I =-6 A , V =-10V, R =25 D DD GS -6 kV/s Reverse diode dv/dt dv/dt I =-6A, V =-16V, di/dt=200A/s, T =150C S DS jmax Gate source voltage V 12 V GS 2 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 1a JESD22-A114-HBM Page 1 2013-11-06Rev. 2.05 BSL207SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 50 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - - 230 2 1) 6 cm cooling area - - 62.5 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -20 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -0.6 -0.9 -1.2 Gate threshold voltage, V = V V GS DS GS(th) I =-40A D A Zero gate voltage drain current I DSS V =-20V, V =0, T =25C - -0.1 -1 DS GS j V =-20V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-12V, V =0 GS DS - 43 65 Drain-source on-state resistance R m DS(on) V =-2.5V, I =-4.9A GS D - 29 41 Drain-source on-state resistance R DS(on) V =-4.5, I =-6A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t 5 sec. Page 2 2013-11-06

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted