BSL207SPH6327XTSA1 Infineon

BSL207SPH6327XTSA1 electronic component of Infineon
BSL207SPH6327XTSA1 Infineon
BSL207SPH6327XTSA1 MOSFETs
BSL207SPH6327XTSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSL207SPH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSL207SPH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSL207SPH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Datasheet: BSL207SPH6327XTSA1 Datasheet (PDF)
Price (USD)
3000: USD 0.2125 ea
Line Total: USD 637.5 
Availability : 2910
  
Ship by Tue. 12 Aug to Mon. 18 Aug
QtyUnit Price
3000$ 0.2125
6000$ 0.21
9000$ 0.2087
12000$ 0.2063

Availability 1843
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 290
Multiples : 1
QtyUnit Price
290$ 0.8989
382$ 0.6813
415$ 0.6277
568$ 0.4583
574$ 0.4537
706$ 0.3685
1089$ 0.2388


Availability 2910
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2125
6000$ 0.21
9000$ 0.2087
12000$ 0.2063


Availability 48
Ship by Tue. 19 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.722
10$ 0.7056
30$ 0.5209
100$ 0.4613


Availability 9339
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7925
10$ 0.5587
100$ 0.3542
500$ 0.2926
1000$ 0.2574
3000$ 0.2431
6000$ 0.2244
9000$ 0.2123


Availability 2766
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.882
10$ 0.6762
51$ 0.3668
140$ 0.3472
1000$ 0.3346


Availability 1843
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 415
Multiples : 1
QtyUnit Price
415$ 0.6277
568$ 0.4583
574$ 0.4537
706$ 0.3685
1089$ 0.2388


Availability 2910
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 446
Multiples : 1
QtyUnit Price
446$ 0.5837
579$ 0.4498
2000$ 0.3437

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSL207SPH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSL207SPH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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Rev. 2.05 BSL207SP OptiMOS -P Small-Signal-Transistor Product Summary Feature V -20 V DS P-Channel R 41 m DS(on) Enhancement mode I -6 A D Super Logic Level (2.5 V rated) P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated 4 3 5 Pb-free lead plating RoHS compliant 2 6 1 QualifiedaccordingtoAECQ101 P-TSOP6-6 HalogenfreeaccordingtoIEC61249221 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and reel Marking Source BSL207SP P-TSOP6-6 H6327:3000 pcs/r. pin 4 sPA Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -6 A T =70C -4.8 A -24 Pulsed drain current I D puls T =25C A 44 mJ Avalanche energy, single pulse E AS I =-6 A , V =-10V, R =25 D DD GS -6 kV/s Reverse diode dv/dt dv/dt I =-6A, V =-16V, di/dt=200A/s, T =150C S DS jmax Gate source voltage V 12 V GS 2 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 1a JESD22-A114-HBM Page 1 2013-11-06Rev. 2.05 BSL207SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 50 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - - 230 2 1) 6 cm cooling area - - 62.5 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -20 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -0.6 -0.9 -1.2 Gate threshold voltage, V = V V GS DS GS(th) I =-40A D A Zero gate voltage drain current I DSS V =-20V, V =0, T =25C - -0.1 -1 DS GS j V =-20V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-12V, V =0 GS DS - 43 65 Drain-source on-state resistance R m DS(on) V =-2.5V, I =-4.9A GS D - 29 41 Drain-source on-state resistance R DS(on) V =-4.5, I =-6A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t 5 sec. Page 2 2013-11-06

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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