BSO083N03MS G
OptiMOS 3 M-Series Power-MOSFET
Product Summary
Features
V 30 V
DS
Optimized for 5V driver application (Notebook, VGA, POL)
R V =10 V 8.3
m
DS(on),max GS
Low FOM for High Frequency SMPS
SW
V =4.5 V 10.5
GS
100% Avalanche tested
I 14 A
D
N-channel
Very low on-resistance R @ V =4.5 V
DS(on) GS
Excellent gate charge x R product (FOM)
PG-DSO-8
DS(on)
Qualified for consumer level application
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Type Package Marking
BSO083N03MS G PG-DSO-8 083N03MS
Maximum ratings, at T =25 C, unless otherwise specified
j
Value
Parameter Symbol Conditions Unit
10 secs steady state
1)
I V =10 V, T =25 C
14 11 A
Continuous drain current D GS A
V =10 V, T =90 C 9.7 7.6
GS A
V =4.5 V, T =25 C 12.4 9.8
GS A
V =4.5 V, T =90 C
8.6 6.8
GS A
2)
I T =25 C 98
Pulsed drain current D,pulse A
3)
I T =25 C 14
Avalanche current, single pulse
AS A
E
Avalanche energy, single pulse I =14 A, R =25 35 mJ
AS
D GS
V 20
Gate source voltage V
GS
1)
P T =25 C
2.5 1.56 W
Power dissipation tot A
T , T -55 ... 150
Operating and storage temperature C
j stg
IEC climatic category; DIN IEC 68-1 55/150/56
Rev.1.1 page 1 2009-11-19BSO083N03MS G
Values
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
R - - 35 K/W
thJS
junction - soldering point
minimal footprint,
Thermal resistance,
R - - 110
thJA
junction - ambient t 10 s
p
minimal footprint,
- - 150
steady state
2 1)
6 cm cooling area ,
- - 50
t 10 s
p
2 1)
6 cm cooling area ,
- - 80
steady state
Electrical characteristics, at T =25 C, unless otherwise specified
j
Static characteristics
V V =0 V, I =1 mA
Drain-source breakdown voltage 30 - - V
(BR)DSS GS D
V V =V , I =250 A
Gate threshold voltage 1 - 2
GS(th) DS GS D
V =30 V, V =0 V,
DS GS
I
Zero gate voltage drain current - 0.1 10 A
DSS
T =25 C
j
V =30 V, V =0 V,
DS GS
- 10 100
T =125 C
j
I V =16 V, V =0 V
Gate-source leakage current - 10 100 nA
GSS GS DS
Drain-source on-state resistance R V =4.5 V, I =12.4 A - 8.4 10.5 m
DS(on) GS D
V =10 V, I =14 A
- 6.9 8.3
GS D
Gate resistance R 0.5 1 1.8
G
|V |>2|I |R ,
DS D DS(on)max
g
Transconductance 20 39 - S
fs
I =14 A
D
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Rev.1.1 page 2 2009-11-19