BSO110N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 11 m DS(on),max GS Low FOM for High Frequency SMPS SW V =4.5 V 13.9 GS 100% Avalanche tested I 12.1 A D N-channel Very low on-resistance R V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) PG-DSO-8 DS(on) Qualified for consumer level application Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSO110N03MS G PG-DSO-8 110N03MS Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 10 secs steady state 1) I V =10 V, T =25 C 12.1 10 A Continuous drain current D GS A V =10 V, T =90 C 8.4 6.6 GS A V =4.5 V, T =25 C 10.8 8.5 GS A V =4.5 V, T =90 C 7.5 5.9 GS A 2) I T =25 C 85 Pulsed drain current D,pulse A 3) I T =25 C 12.1 Avalanche current, single pulse AS A Avalanche energy, single pulse E I =12.1 A, R =25 20 mJ AS D GS V Gate source voltage 20 V GS 1) P T =25 C Power dissipation 2.5 1.56 W tot A T , T Operating and storage temperature -55 ... 150 C j stg 55/150/56 IEC climatic category DIN IEC 68-1 Rev.1.1 page 1 2009-11-19BSO110N03MS G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 35 K/W thJS junction - soldering point minimal footprint, Thermal resistance, R - - 110 thJA junction - ambient t 10 s p minimal footprint, - - 150 steady state 2 1) 6 cm cooling area , - - 50 t 10 s p 2 1) 6 cm cooling area , - - 80 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D V V =V , I =250 A Gate threshold voltage 1 - 2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 10 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 100 T =125 C j I V =16 V, V =0 V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =10.8 A - 11.1 13.9 m DS(on) GS D V =10 V, I =12.1 A - 9.2 11 GS D Gate resistance R 0.4 0.9 1.6 G V >2 I R , DS D DS(on)max g Transconductance 16 31 - S fs I =12.1 A D 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev.1.1 page 2 2009-11-19