Rev. 2.2 BSP125 SIPMOS Power-Transistor Product Summary Feature V 600 V DS N-Channel R 45 DS(on) Enhancement mode I 0.12 A D Logic Level PG-SOT223 dv/dt rated Pb-free lead plating RoHS compliant x Qualified according to AEC Q101 HalogenfreeaccordingtoIEC61249221 Marking Packaging Type Package RoHS compliant Tape and Reel Information Non dry PG-SOT223 Yes H6433: 4000 pcs/reel BSP125 BSP125 PG-SOT223 BSP125 Non dry Yes H6327: 1000 pcs/reel BSP125 Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 0.12 A T =70C 0.1 A 0.48 Pulsed drain current I D puls T =25C A 6 kV/s Reverse diode dv/dt dv/dt I =0.12A, V =480V, di/dt=200A/s, T =175C S DS jmax V Gate source voltage V 20 GS ESD Class (JESD22-A114-HBM) 1A (>250V, <500V) 1.8 W Power dissipation P tot T =25C, T =25 A A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 Page 1 2012- 11- 27Rev. 2.2 BSP125 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 25 K/W Thermal resistance, junction - soldering point R thJS (Pin 4) SMD version, device on PCB: R thJA min. footprint - - 115 2 1) 6 cm cooling area - - 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics 600 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =0.25mA GS D 1.3 1.9 2.3 Gate threshold voltage, V = V V GS DS GS(th) I =94A D A Zero gate voltage drain current I DSS V =600V, V =0, T =25C - - 0.1 DS GS j V =600V, V =0, T =125C - - 5 DS GS j - 10 100 nA Gate-source leakage current I GSS V =20V, V =0 GS DS - 26 60 Drain-source on-state resistance R DS(on) V =4.5V, I =0.11A GS D - 25 45 Drain-source on-state resistance R DS(on) V =10V, I =0.12A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2012- 11- 27