X-On Electronics has gained recognition as a prominent supplier of BSP129 H6906 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP129 H6906 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP129 H6906 Infineon

BSP129 H6906 electronic component of Infineon
BSP129 H6906 Infineon
BSP129 H6906 MOSFETs
BSP129 H6906  Semiconductors

Images are for reference only
See Product Specifications
Part No. BSP129 H6906
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 240V 50mA SOT-223-3
Datasheet: BSP129 H6906 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.215 ea
Line Total: USD 1.22 
Availability - 9312
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9312
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 1.215
10 : USD 0.966
100 : USD 0.7084
500 : USD 0.6182
1000 : USD 0.517
2000 : USD 0.4939
5000 : USD 0.4939
10000 : USD 0.4752
25000 : USD 0.4741

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Height
Length
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSP129 H6906 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP129 H6906 and other electronic components in the MOSFETs category and beyond.

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BSP129 SIPMOS Small-Signal-Transistor Product Summary Features V 240 V DS N-channel R 6 W DS(on),max Depletion mode I 0.05 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead plating RoHS compliant PG-SOT223 Qualified according to AEC Q101 HalogenfreeaccordingtoIEC61249221 Type Package Tape and Reel Marking Packaging Type Package Tape and Reel Marking Packaging BSP129 PG-SOT223 H6327: 1000 pcs/reel BSP129 Non dry BSP129 PG-SOT223 L6327: 1000 pcs/reel BSP129 Non dry BSP129 PG-SOT223 H6906: 1000 pcs/reel BSP129 Non dry 1) sorted in V bands GS(th) BSP129 PG-SOT223 L6906: 1000 pcs/reel soed BSP129 Non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 0.35 A D A T =70C 0.28 A Pulsed drain current I T =25C 1.4 D,pulse A I =0.36A, D V =192V, DS Reverse diode dv /dt dv /dt 6 kV/s di /dt =200A/s, T =150C j,max V Gate source voltage 20 V GS 1A(>250V,<500V) ESD class (JESD22-A114-HBM) Power dissipation P T =25C 1.8 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 1. 42 page 1 2012-11-29BSP129 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 25 K/W thJS junction - soldering point (pin 4) R SMD version, device on PCB minimal footprint - - 115 thJA 2 1) - - 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-3V, I =250A Drain-source breakdown voltage 240 - - V (BR)DSS GS D Gate threshold voltage V V =3V, I =108A -2.1 -1.4 -1 GS(th) DS D V =240V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-3V, T =25C GS j V =240V, DS - - 10 V =-3V, T =125C GS j Gate-source leakage current I V =20V, V =0V - - 10 nA GSS GS DS On-state drain current I V =0V, V =10V 50 - - mA DSS GS DS R V =0V, I =25mA Drain-source on-state resistance - 6.5 20 W DS(on) GS D V =10V, I =0.35A - 4.2 6.0 GS D V >2 I R , DS D DS(on)max g Transconductance 0.18 0.36 - S fs I =0.28A D 3) Threshold voltage V sorted in bands GS(th) V V =3V, I =108A J -1.2 - -1 V GS(th) DS D K -1.35 - -1.15 L -1.5 - -1.3 M -1.65 - -1.45 N -1.8 - -1.6 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1. 42 page 2 2012-11-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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