BSP 299 SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated V = 2.1 ... 4.0 V GS(th) Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type V I R Package Marking DS D DS(on) BSP 299 500 V 0.4 A 4 SOT-223 BSP 299 Type Ordering Code Tape and Reel Information BSP 299 Q67000-S225 E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current I A D T = 44 C 0.4 A DC drain current, pulsed I Dpuls T = 25 C 1.6 A Avalanche energy, single pulse E mJ AS I = 1.2 A, V = 50 V, R = 25 D DD GS L = 163 mH, T = 25 C 130 j Gate source voltage V 20 V GS Power dissipation P W tot T = 25 C 1.8 A Semiconductor Group 1 Sep-12-1996BSP 299 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature T -55 ... + 150 C j Storage temperature T -55 ... + 150 stg Thermal resistance, chip to ambient air R 70 K/W thJA 1) Therminal resistance, junction-soldering point R 10 thJS DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 2 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm copper area for drain connection Electrical Characteristics, at T = 25C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS V = 0 V, I = 0.25 mA, T = 0 C 500 - - GS D j Gate threshold voltage V GS(th) V =V I = 1 mA 2.1 3 4 GS DS, D Zero gate voltage drain current I A DSS V = 500 V, V = 0 V, T = 25 C - 0.1 1 DS GS j V = 500 V, V = 0 V, T = 125 C - 10 100 DS GS j Gate-source leakage current I nA GSS V = 20 V, V = 0 V - 10 100 GS DS Drain-Source on-state resistance R DS(on) V = 10 V, I = 0.4 A - 3.5 4 GS D Semiconductor Group 2 Sep-12-1996