BSP372N OptiMOS Small-Signal-Transistor Product Summary Features V 100 V DS N-channel R V =10 V 0.23 W DS(on),max GS Enhancement mode V =4.5 V 0.27 GS Logic Level (4.5V rated) I 1.8 A D Avalanche rated Qualified according to AEC Q101 PG-SOT223 100% lead-free RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking Halogen-Free Packing BSP372N BSP372N SOT223 H6327: 1000 pcs/ reel Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 1.8 A D A T =70C 1.5 A I T =25C Pulsed drain current 7.2 D,pulse A Avalanche energy, single pulse E I =1.8A, R =25W 33 mJ AS D GS I =1.8A, V =80V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS 1) P T =25C 1.8 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.0 page 1 2013-04-03BSP372N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance R - - 25 K/W thJS junction - soldering point Thermal resistance R minimal footprint - - 110 thJA 2 1) junction - ambient - - 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =250A 100 - - V (BR)DSS GS D Gate threshold voltage V V =VgsV, I =218A 0.8 1.4 1.80 GS(th) DS D V =100V, V =0V, DS GS Drain-source leakage current I - - 0.1 mA DSS T =25C j V =100V, V =0V, DS GS - - 10 T =150C j Gate-source leakage current I V =20V, V =0V - - 10 nA GSS GS DS Gate-source on-state resistance R V =10V, I =1.8A - 153 230 mW DS(on) GS D V =4.5V, I =1.7A - 172 270 GS D V >2 I R , DS D DS(on)max g Transconductance 5.1 - S fs I =1.5A D 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for drain connection. PCB is vertical in still air. Rev 2.0 page 2 2013-04-03