BSP613PH6327XTSA1 Infineon

BSP613PH6327XTSA1 electronic component of Infineon
BSP613PH6327XTSA1 Infineon
BSP613PH6327XTSA1 MOSFETs
BSP613PH6327XTSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSP613PH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP613PH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSP613PH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Datasheet: BSP613PH6327XTSA1 Datasheet (PDF)
Price (USD)
1000: USD 0.468 ea
Line Total: USD 468 
Availability : 970
  
Ship by Tue. 28 Oct to Mon. 03 Nov
QtyUnit Price
1000$ 0.468
2000$ 0.4438
3000$ 0.4375
4000$ 0.4375
5000$ 0.4312

Availability 970
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.468
2000$ 0.4438
3000$ 0.4375
4000$ 0.4375
5000$ 0.4312


Availability 5101
Ship by Fri. 24 Oct to Tue. 28 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8
10$ 0.8772
100$ 0.6435
500$ 0.5632
1000$ 0.5148
2000$ 0.5071
5000$ 0.4939
25000$ 0.4829


Availability 725
Ship by Fri. 24 Oct to Tue. 28 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.212
10$ 1.134
21$ 0.9422
56$ 0.8904
100$ 0.8554


Availability 26190
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.5833
2000$ 0.4805

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Power Dissipation
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSP613PH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP613PH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSP613P SIPMOS Small-Signal-Transistor Product Summary Feature V -60 V DS P-Channel R 0.13 W DS(on) Enhancement mode I -2.9 A D Avalanche rated PG-SOT223 dv/dt rated Ideal for fast switching buck converter Drain pin 2,4 Gate pin1 Qualified according to AEC Q101 Source pin 3 HalogenfreeaccordingtoIE C61249221 Type Package Tape and reel Packaging Marking BSP613P PG-SOT223 H6327: 1000pcs/r. NonD r y B S P 613 P Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -2.9 A T =70C -2.3 A -11.6 Pulsed drain current I D puls T =25C A Avalanche energy, single pulse E 150 mJ AS I =2.9 A , V =-25V, R =25W D DD GS 0.18 Avalanche energy, periodic limited by T E jmax AR 6 kV/s Reverse diode dv/dt dv/dt I =2.9A, V =-48V, di/dt=-200A/s, T =150C S DS jmax Gate source voltage V 20 V GS 1.8 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 1c JESD22-A114-HBM Rev.2.8 Page 1 201 6- 05- 30 BSP613P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 19 K/W Thermal resistance, junction - soldering point R thJS (Pin 4) Thermal resistance, junction - ambient, leaded R - 100 - thJA SMD version, device on PCB: R thJA min. footprint - - 100 2 1) 6 cm cooling area - - 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -60 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D Gate threshold voltage, V = V V -2.1 -3 -4 GS DS GS(th) I =-1mA D A Zero gate voltage drain current I DSS V =-60V, V =0, T =25C - -0.1 -1 DS GS j V =-60V, V =0, T =125C - -10 -100 DS GS j Gate-source leakage current I - -10 -100 nA GSS V =-20V, V =0 GS DS - 0.11 0.13 Drain-source on-state resistance R W DS(on) V =-10V, I =2.9A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.8 Page 2 201 6- 05- 30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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