BSS139 H6906 Infineon

BSS139 H6906 electronic component of Infineon
BSS139 H6906 Infineon
BSS139 H6906 MOSFETs
BSS139 H6906  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSS139 H6906 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS139 H6906 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSS139 H6906
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET
Datasheet: BSS139 H6906 Datasheet (PDF)
Price (USD)
1: USD 1.2625 ea
Line Total: USD 1.26 
Availability : 34648
  
Ship by Wed. 30 Jul to Fri. 01 Aug
QtyUnit Price
1$ 1.2625
10$ 0.7572
100$ 0.4686
500$ 0.3828
1000$ 0.3454
3000$ 0.3234
6000$ 0.2948
9000$ 0.2926

Availability 34648
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2625
10$ 0.7572
100$ 0.4686
500$ 0.3828
1000$ 0.3454
3000$ 0.3234
6000$ 0.2948
9000$ 0.2926

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Height
Length
Product
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS139 H6906 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS139 H6906 and other electronic components in the MOSFETs category and beyond.

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BSS139 SIPMOS Small-Signal-Transistor Product Summary Features V 250 V DS N-channel R 30 DS(on),max Depletion mode I 0.03 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead-plating RoHS compliant PG-SOT-23 Type Package Tape and Reel Information Marking Pb-free BSS139 PG-SOT-23 H6327: 3000 pcs/ree Yes STs 1) BSS139 PG-SOT-23 STs Yes H6906: 3000 pcs/reel sorted in V bands S(th) Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 C 0.10 A D A T =70 C 0.08 A Pulsed drain current I T =25 C 0.4 D,pulse A I =0.1 A,V =200 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max Gate source voltage V 20 V GS ESD class 0 (<250V) (JESD22-A114-HBM) Power dissipation P T =25 C 0.36 W tot A T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 1.8 page 1 2009-08-18BSS139 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R minimal footprint - - 350 K/W thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-3 V, I =250 A Drain-source breakdown voltage 250 - - V (BR)DSS GS D Gate threshold voltage V V =3 V, I =56 A -2.1 -1.4 -1 GS(th) DS D V =250 V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-3 V, T =25 C GS j V =250 V, DS -- 10 V =-3 V, T =125 C GS j I V =20 V, V =0 V Gate-source leakage current - - 10 nA GSS GS DS I V =0 V, V =10 V On-state drain current 30 - - mA DSS GS DS R V =0 V, I =15 mA Drain-source on-state resistance - 12.5 30 DS(on) GS D =10 V,I =0.1 mA V - 7.8 14 GS D V >2 I R , DS D DS(on)max g Transconductance 0.060 0.13 - S fs I =0.08 A D 2) Threshold voltage V sorted in bands GS(th) V V =3 V, I =56 A J -1.2 - -1 V GS(th) DS D K -1.35--1.15 L -1.5 - -1.3 M -1.65--1.45 N -1.8 - -1.6 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.8 page 2 2009-08-18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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