X-On Electronics has gained recognition as a prominent supplier of BSS159NH6906XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS159NH6906XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS159NH6906XTSA1 Infineon

Hot BSS159NH6906XTSA1 electronic component of Infineon
BSS159NH6906XTSA1 Infineon
BSS159NH6906XTSA1 MOSFETs
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Part No. BSS159NH6906XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R
Datasheet: BSS159NH6906XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
863: USD 0.3015 ea
Line Total: USD 260.19 
Availability - 41786
Ship by Thu. 03 Jul to Wed. 09 Jul
MOQ: 863  Multiples: 1
Pack Size: 1
Availability Price Quantity
41786
Ship by Thu. 03 Jul to Wed. 09 Jul
MOQ : 863
Multiples : 1
863 : USD 0.3015
875 : USD 0.2972
889 : USD 0.2928
902 : USD 0.2884
916 : USD 0.2841
930 : USD 0.2797
1000 : USD 0.2752
3000 : USD 0.2604
6000 : USD 0.2562
15000 : USD 0.252
30000 : USD 0.2478

36366
Ship by Tue. 01 Jul to Thu. 03 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3625
25 : USD 0.3444
100 : USD 0.3163
250 : USD 0.2992
500 : USD 0.2695
1000 : USD 0.2552
3000 : USD 0.253
6000 : USD 0.2519

25642
Ship by Thu. 03 Jul to Wed. 09 Jul
MOQ : 1204
Multiples : 1
1204 : USD 0.3894
10000 : USD 0.347
100000 : USD 0.2907

40740
Ship by Thu. 03 Jul to Wed. 09 Jul
MOQ : 42000
Multiples : 42000
42000 : USD 0.2742
45000 : USD 0.2714
48000 : USD 0.2688
60000 : USD 0.2661
75000 : USD 0.2634
150000 : USD 0.2608
300000 : USD 0.2581

2910
Ship by Thu. 03 Jul to Wed. 09 Jul
MOQ : 1204
Multiples : 1
1204 : USD 0.3894
10000 : USD 0.347
100000 : USD 0.2907

70865
Ship by Thu. 03 Jul to Wed. 09 Jul
MOQ : 1204
Multiples : 1
1204 : USD 0.3894
10000 : USD 0.347
100000 : USD 0.2907

84390
Ship by Thu. 03 Jul to Wed. 09 Jul
MOQ : 1204
Multiples : 1
1204 : USD 0.3894
10000 : USD 0.347
100000 : USD 0.2907

   
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We are delighted to provide the BSS159NH6906XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS159NH6906XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSS159N SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 8 DS(on),max Depletion mode I 0.13 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Qualified according to AEC Q101 PG-SOT-23 100% lead-free Halogen-free RoHS compliant 3 1 2 Type Package Pb-free Halogen-free Tape and Reel Information Marking BSS159N PG-SOT-23 Yes Yes H6327: 3000 pcs/reel SGs BSS159NBSS159N PPGG-S-SOTOT-2-233 YeYess YeYess H6906: 3000 pcH6906: 3000 pcss//rreel seel soorrtted in ed in SGSGss 1)1) VV bandsbands GSGS(th(th)) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 0.23 A D A T =70 C 0.18 A I T =25 C Pulsed drain current 0.92 D,pulse A I =0.23 A, V =60 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS ESD Class JESD22-A114 -HBM 0(<250V) P T =25 C Power dissipation 0.36 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 2.2 page 1 2009-07-29BSS159N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R minimal footprint - - 350 K/W Thermal characteristics thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-10 V, I =250 A Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =3 V, I =26 A Gate threshold voltage -3.5 -2.8 -2.4 GS(th) DS D V =60 V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-10 V, T =25 C GS j V =60 V, DS -- 10 V =-10 V, T =125 C GS j II VV =20 V, 20 V VV =0 V0V GtGate-source leakage currentl k t - - 1010 nAA GSS GS DS I V =0 V, V =10 V On-state drain current 130 - - mA DSS GS DS Drain-source on-state resistance R V =0 V, I =0.07 A - 3.9 8 DS(on) GS D V =10 V, I =0.16 A - 1.7 3.5 GS D V >2 I R , DS D DS(on)max Transconductance g 0.1 0.19 - S fs I =0.16 A D 2) Threshold voltage V sorted in bands GS(th) V V =3 V, I =26 A J -2.6 - -2.4 V GS(th) DS D K -2.75--2.55 L -2.9--2.7 M -3.05--2.85 N -3.2--3 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.2Rev. 2.2 page 2page 2 2009-07-292009-07-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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